An Automated Setup for the Characterization of Time-Based Degradation Effects including the Process Variability in 40-nm CMOS Transistors

Xhesila Xhafa, Ali Dogus Gungordu, Didem Erol, Yavuzhan Yavuz, Mustafa Berke Yelten

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9 Atıf (Scopus)

Özet

This article reports a test chip design in commercial 40-nm process technology to characterize the level of time-based degradation in metal-oxide-semiconductor field-effect transistors (MOSFETs). The two phenomena that have been concentrated on are the bias temperature instability (BTI) and the hot carrier injection (HCI). Stress tests have been carried out on both n- and p-MOSFETs with large channel widths and shorter channel lengths, as practically observed in analog and radio frequency circuits. Reliability characterization has been extended to cover the body effect and the impact of process variations both at prestress and poststress stages. The results demonstrate that the designed test chip has been instrumental in observing the extent of degradation due to BTI and HCI. Furthermore, both the body effect and the poststress variability have been found to affect the transistor and circuit performance significantly.

Orijinal dilİngilizce
Makale numarası9458293
DergiIEEE Transactions on Instrumentation and Measurement
Hacim70
DOI'lar
Yayın durumuYayınlandı - 2021

Bibliyografik not

Publisher Copyright:
© 1963-2012 IEEE.

Finansman

Manuscript received March 1, 2021; revised June 5, 2021; accepted June 8, 2021. Date of publication June 17, 2021; date of current version July 13, 2021. This work was supported by the Technological Research Council of Turkey under the project TÜB˙TAK 1001 118E253. The Associate Editor coordinating the review process was Zhengyu Peng. (Corresponding author: Mustafa Berke Yelten.) The authors are with the Department of Electronics and Communications Engineering, Istanbul Technical University, 34467 Istanbul, Turkey (e-mail: [email protected]; [email protected]; [email protected]; [email protected]; [email protected]). Digital Object Identifier 10.1109/TIM.2021.3090175

FinansörlerFinansör numarası
Technological Research Council of TurkeyTÜB˙TAK 1001 118E253

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