A silicon-on-sapphire low-voltage temperature sensor for energy scavengers

Tolga Kaya; Hur Koser; Eugenio Culurciello

doi:10.1109/iscas.2007.378617

A silicon-on-sapphire low-voltage temperature sensor for energy scavengers

Tolga Kaya^*
, Hur Koser
, Eugenio Culurciello

^*Bu çalışma için yazışmadan sorumlu yazar

İşletme Mühendisliği Bölümü

Yale University

Araştırma sonucu: Dergiye katkı › Konferans makalesi › bilirkişi

Özet

We report on the design and test of a low-voltage temperature sensor designed for MEMS power-harvesting systems. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range of 1-1.5V. The prototype was fabricated on a conventional 0.5μm Silicon-on-Sapphire (SOS) process. The sensor design consumes 15μA of current at 1V. The internal reference voltage is 550mV. The temperature sensor has a digital square wave output whose frequency is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6kHz/°C. The output is also independent of supply voltage in the range of 1-1.5V. We report measured results and targeted applications for the proposed circuit.

Orijinal dil	İngilizce
Makale numarası	4253173
Sayfa (başlangıç-bitiş)	2455-2458
Sayfa sayısı	4
Dergi	Proceedings - IEEE International Symposium on Circuits and Systems
DOI'lar	https://doi.org/10.1109/iscas.2007.378617
Yayın durumu	Yayınlandı - 2007
Etkinlik	2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007 - New Orleans, LA, United States Süre: 27 May 2007 → 30 May 2007

Belgeye Erişim

10.1109/iscas.2007.378617

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

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title = "A silicon-on-sapphire low-voltage temperature sensor for energy scavengers",

abstract = "We report on the design and test of a low-voltage temperature sensor designed for MEMS power-harvesting systems. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range of 1-1.5V. The prototype was fabricated on a conventional 0.5μm Silicon-on-Sapphire (SOS) process. The sensor design consumes 15μA of current at 1V. The internal reference voltage is 550mV. The temperature sensor has a digital square wave output whose frequency is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6kHz/°C. The output is also independent of supply voltage in the range of 1-1.5V. We report measured results and targeted applications for the proposed circuit.",

author = "Tolga Kaya and Hur Koser and Eugenio Culurciello",

year = "2007",

doi = "10.1109/iscas.2007.378617",

language = "English",

pages = "2455--2458",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007 ; Conference date: 27-05-2007 Through 30-05-2007",

}

TY - JOUR

T1 - A silicon-on-sapphire low-voltage temperature sensor for energy scavengers

AU - Kaya, Tolga

AU - Koser, Hur

AU - Culurciello, Eugenio

PY - 2007

Y1 - 2007

N2 - We report on the design and test of a low-voltage temperature sensor designed for MEMS power-harvesting systems. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range of 1-1.5V. The prototype was fabricated on a conventional 0.5μm Silicon-on-Sapphire (SOS) process. The sensor design consumes 15μA of current at 1V. The internal reference voltage is 550mV. The temperature sensor has a digital square wave output whose frequency is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6kHz/°C. The output is also independent of supply voltage in the range of 1-1.5V. We report measured results and targeted applications for the proposed circuit.

AB - We report on the design and test of a low-voltage temperature sensor designed for MEMS power-harvesting systems. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range of 1-1.5V. The prototype was fabricated on a conventional 0.5μm Silicon-on-Sapphire (SOS) process. The sensor design consumes 15μA of current at 1V. The internal reference voltage is 550mV. The temperature sensor has a digital square wave output whose frequency is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6kHz/°C. The output is also independent of supply voltage in the range of 1-1.5V. We report measured results and targeted applications for the proposed circuit.

UR - https://www.scopus.com/pages/publications/34548817037

U2 - 10.1109/iscas.2007.378617

DO - 10.1109/iscas.2007.378617

M3 - Conference article

AN - SCOPUS:34548817037

SN - 0271-4310

SP - 2455

EP - 2458

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

M1 - 4253173

T2 - 2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007

Y2 - 27 May 2007 through 30 May 2007

ER -

A silicon-on-sapphire low-voltage temperature sensor for energy scavengers

Özet

Belgeye Erişim

Diğer Dosyalar ve Linkler

Parmak izi

Alıntı Yap