A silicon Hall sensor SoC for current sensors

Alper Girgin; Melih Bilmez; Hamid Yadegar Amin; Tufan Coşkun Karalar

doi:10.1016/j.mejo.2019.04.020

A silicon Hall sensor SoC for current sensors

Alper Girgin
, Melih Bilmez
, Hamid Yadegar Amin
, Tufan Coşkun Karalar^*

^*Bu çalışma için yazışmadan sorumlu yazar

Elektronik ve Hab.Müh.Bölümü

Istanbul Technical University

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

26 Atıf (Scopus)

Özet

In this paper we present a System on Chip (SoC) that implements a Hall Effect Sensor along with its readout circuits and calibration support. The sensor is designed for use in Hall effect based current sensors. The SoC was implemented in 0.18u CMOS technology and integrates Hall sense elements, preamplifiers as well as a delta sigma ADC, a DAC and a digital calibration. The SoC achieves 11 V/T gain and 0.76% RMS accuracy over a range of ±300 mT and 30 kHz signal bandwidth. The SoC integrates a digital correction unit that implements a polynomial computation algorithm for calibrating out the current sensor's magnetic core induced nonlinearities. Offset temperature drift of the sensor is 6.81μT per degrees over −40 °C to 85 °C range. A current sensor is built using the SoC. It can measure currents from −10 A to 10 A and achieve 1.67% RMS measurement accuracy.

Orijinal dil	İngilizce
Sayfa (başlangıç-bitiş)	12-18
Sayfa sayısı	7
Dergi	Microelectronics Journal
Hacim	90
DOI'lar	https://doi.org/10.1016/j.mejo.2019.04.020
Yayın durumu	Yayınlandı - Ağu 2019

Bibliyografik not

Publisher Copyright:
© 2019 Elsevier Ltd

Finansman

This project was funded by the Scientific and Technological Research Council of Turkey TUBITAK research grant 115C053. Assoc. Prof. Hüseyin Kurt is acknowledged for his assistance in magnetic sensor characterization. ITU VLSI Laboratories is acknowledged for the SoC characterization. This project was funded by the Scientific and Technological Research Council of Turkey TUBITAK research grant 115C053 . Assoc. Prof. Hüseyin Kurt is acknowledged for his assistance in magnetic sensor characterization. ITU VLSI Laboratories is acknowledged for the SoC characterization.

Finansörler	Finansör numarası
Scientific and Technological Research Council of Turkey TUBITAK
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu	115C053

Belgeye Erişim

10.1016/j.mejo.2019.04.020

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

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title = "A silicon Hall sensor SoC for current sensors",

abstract = "In this paper we present a System on Chip (SoC) that implements a Hall Effect Sensor along with its readout circuits and calibration support. The sensor is designed for use in Hall effect based current sensors. The SoC was implemented in 0.18u CMOS technology and integrates Hall sense elements, preamplifiers as well as a delta sigma ADC, a DAC and a digital calibration. The SoC achieves 11 V/T gain and 0.76\% RMS accuracy over a range of ±300 mT and 30 kHz signal bandwidth. The SoC integrates a digital correction unit that implements a polynomial computation algorithm for calibrating out the current sensor's magnetic core induced nonlinearities. Offset temperature drift of the sensor is 6.81μT per degrees over −40 °C to 85 °C range. A current sensor is built using the SoC. It can measure currents from −10 A to 10 A and achieve 1.67\% RMS measurement accuracy.",

keywords = "Digital sensor calibration, Hall sensor, Hall sensor based current sensors, Integrated silicon sensor, Read out ICs, Sensor SoC",

author = "Alper Girgin and Melih Bilmez and Amin, \{Hamid Yadegar\} and Karalar, \{Tufan Co{\c s}kun\}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2019",

month = aug,

doi = "10.1016/j.mejo.2019.04.020",

language = "English",

volume = "90",

pages = "12--18",

journal = "Microelectronics Journal",

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publisher = "Elsevier Ltd",

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TY - JOUR

T1 - A silicon Hall sensor SoC for current sensors

AU - Girgin, Alper

AU - Bilmez, Melih

AU - Amin, Hamid Yadegar

AU - Karalar, Tufan Coşkun

PY - 2019/8

Y1 - 2019/8

N2 - In this paper we present a System on Chip (SoC) that implements a Hall Effect Sensor along with its readout circuits and calibration support. The sensor is designed for use in Hall effect based current sensors. The SoC was implemented in 0.18u CMOS technology and integrates Hall sense elements, preamplifiers as well as a delta sigma ADC, a DAC and a digital calibration. The SoC achieves 11 V/T gain and 0.76% RMS accuracy over a range of ±300 mT and 30 kHz signal bandwidth. The SoC integrates a digital correction unit that implements a polynomial computation algorithm for calibrating out the current sensor's magnetic core induced nonlinearities. Offset temperature drift of the sensor is 6.81μT per degrees over −40 °C to 85 °C range. A current sensor is built using the SoC. It can measure currents from −10 A to 10 A and achieve 1.67% RMS measurement accuracy.

AB - In this paper we present a System on Chip (SoC) that implements a Hall Effect Sensor along with its readout circuits and calibration support. The sensor is designed for use in Hall effect based current sensors. The SoC was implemented in 0.18u CMOS technology and integrates Hall sense elements, preamplifiers as well as a delta sigma ADC, a DAC and a digital calibration. The SoC achieves 11 V/T gain and 0.76% RMS accuracy over a range of ±300 mT and 30 kHz signal bandwidth. The SoC integrates a digital correction unit that implements a polynomial computation algorithm for calibrating out the current sensor's magnetic core induced nonlinearities. Offset temperature drift of the sensor is 6.81μT per degrees over −40 °C to 85 °C range. A current sensor is built using the SoC. It can measure currents from −10 A to 10 A and achieve 1.67% RMS measurement accuracy.

KW - Digital sensor calibration

KW - Hall sensor

KW - Hall sensor based current sensors

KW - Integrated silicon sensor

KW - Read out ICs

KW - Sensor SoC

UR - https://www.scopus.com/pages/publications/85067010577

U2 - 10.1016/j.mejo.2019.04.020

DO - 10.1016/j.mejo.2019.04.020

M3 - Article

AN - SCOPUS:85067010577

SN - 0026-2692

VL - 90

SP - 12

EP - 18

JO - Microelectronics Journal

JF - Microelectronics Journal

ER -

A silicon Hall sensor SoC for current sensors

Özet

Bibliyografik not

Finansman

Belgeye Erişim

Diğer Dosyalar ve Linkler

Parmak izi

Alıntı Yap