A new approach for the extraction of SPICE MOSFET level-3 static model parameters

Metin Yazgi; Hakan Kuntman

doi:10.1109/ICECS.1998.813372

A new approach for the extraction of SPICE MOSFET level-3 static model parameters

Metin Yazgi, Hakan Kuntman

Elektronik ve Hab.Müh.Bölümü

Istanbul Technical University

Araştırma sonucu: ???type-name??? › Konferans katkısı › bilirkişi

5 Atıf (Scopus)

Özet

An iteration procedure obtained by using a new approach is presented for the extraction of SPICE Level-3 MOS Transistor static model parameters KP, V_TH, θ, V_MAX and R_S(= R_D). The procedure uses both gate and drain characteristics or one of these in the triode region of operation. As well as the triode region parameters, N_FS and χ can be find in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for determination of Level-3 model parameters. In addition to that, it is possible to use this new approach for other models which can be represented by polinomial equations in which the parameters are coefficients as in eqn (2).

Orijinal dil	İngilizce
Ana bilgisayar yayını başlığı	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Yayınlayan	Institute of Electrical and Electronics Engineers Inc.
Sayfalar	505-508
Sayfa sayısı	4
ISBN (Elektronik)	0780350081
DOI'lar	https://doi.org/10.1109/ICECS.1998.813372
Yayın durumu	Yayınlandı - 1998
Etkinlik	5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998 - Lisboa, Portugal Süre: 7 Eyl 1998 → 10 Eyl 1998

Yayın serisi

Adı	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Hacim	1

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998
Ülke/Bölge	Portugal
Şehir	Lisboa
Periyot	7/09/98 → 10/09/98

Bibliyografik not

Publisher Copyright:
© 1998 IEEE.

Belgeye Erişim

10.1109/ICECS.1998.813372

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

Yazgi, M., & Kuntman, H. (1998). A new approach for the extraction of SPICE MOSFET level-3 static model parameters. In Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems (pp. 505-508). Makale 813372 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Hac. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.1998.813372

@inproceedings{f13ed6b991464f3fa73af8d55e36207d,

title = "A new approach for the extraction of SPICE MOSFET level-3 static model parameters",

abstract = "An iteration procedure obtained by using a new approach is presented for the extraction of SPICE Level-3 MOS Transistor static model parameters KP, VTH, θ, VMAX and RS(= RD). The procedure uses both gate and drain characteristics or one of these in the triode region of operation. As well as the triode region parameters, NFS and χ can be find in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for determination of Level-3 model parameters. In addition to that, it is possible to use this new approach for other models which can be represented by polinomial equations in which the parameters are coefficients as in eqn (2).",

author = "Metin Yazgi and Hakan Kuntman",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998 ; Conference date: 07-09-1998 Through 10-09-1998",

year = "1998",

doi = "10.1109/ICECS.1998.813372",

language = "English",

series = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "505--508",

booktitle = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

address = "United States",

}

Yazgi, M & Kuntman, H 1998, A new approach for the extraction of SPICE MOSFET level-3 static model parameters. in Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems., 813372, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, hac. 1, Institute of Electrical and Electronics Engineers Inc., pp. 505-508, 5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998, Lisboa, Portugal, 7/09/98. https://doi.org/10.1109/ICECS.1998.813372

A new approach for the extraction of SPICE MOSFET level-3 static model parameters. / Yazgi, Metin; Kuntman, Hakan.
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Institute of Electrical and Electronics Engineers Inc., 1998. p. 505-508 813372 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Hac. 1).

Araştırma sonucu: ???type-name??? › Konferans katkısı › bilirkişi

TY - GEN

T1 - A new approach for the extraction of SPICE MOSFET level-3 static model parameters

AU - Yazgi, Metin

AU - Kuntman, Hakan

PY - 1998

Y1 - 1998

N2 - An iteration procedure obtained by using a new approach is presented for the extraction of SPICE Level-3 MOS Transistor static model parameters KP, VTH, θ, VMAX and RS(= RD). The procedure uses both gate and drain characteristics or one of these in the triode region of operation. As well as the triode region parameters, NFS and χ can be find in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for determination of Level-3 model parameters. In addition to that, it is possible to use this new approach for other models which can be represented by polinomial equations in which the parameters are coefficients as in eqn (2).

AB - An iteration procedure obtained by using a new approach is presented for the extraction of SPICE Level-3 MOS Transistor static model parameters KP, VTH, θ, VMAX and RS(= RD). The procedure uses both gate and drain characteristics or one of these in the triode region of operation. As well as the triode region parameters, NFS and χ can be find in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for determination of Level-3 model parameters. In addition to that, it is possible to use this new approach for other models which can be represented by polinomial equations in which the parameters are coefficients as in eqn (2).

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U2 - 10.1109/ICECS.1998.813372

DO - 10.1109/ICECS.1998.813372

M3 - Conference contribution

AN - SCOPUS:0032275928

T3 - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

SP - 505

EP - 508

BT - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998

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ER -

Yazgi M, Kuntman H. A new approach for the extraction of SPICE MOSFET level-3 static model parameters. In Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Institute of Electrical and Electronics Engineers Inc. 1998. p. 505-508. 813372. (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems). doi: 10.1109/ICECS.1998.813372

A new approach for the extraction of SPICE MOSFET level-3 static model parameters

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