A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging

Ahmet Suna, Serdar Ozoguz

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Özet

In this paper, a front-end high linearity low-noise-amplifier (LNA) has been introduced for high frequency ultrasound imaging. The design has been accomplished through UMC 130 nm complementary metal oxide semiconductor (CMOS) technology. Apart from noise and distortion cancellation of the common gate (CG) stage, 'derivative superposition' (DS) method has been adapted to the proposed design. As a result of this, third order intermodulation product suppression has been achieved, and linearity performance of the overall design has been significantly improved. At 37°C, the proposed ultrasound balun LNA accomplishes a voltage gain of greater than 19 dB between 0.3 MHz to 80 MHz, a third order input intercept point (IIP3) value of -4.5 dB, a noise figure (NF) value of 4.9 dB, and a power dissipation value of 189.9 μW. The proposed design simultaneously achieved low power and high third order linearity.

Orijinal dilİngilizce
Ana bilgisayar yayını başlığı2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
YayınlayanInstitute of Electrical and Electronics Engineers Inc.
Sayfalar687-690
Sayfa sayısı4
ISBN (Elektronik)9781728109961
DOI'lar
Yayın durumuYayınlandı - Kas 2019
Etkinlik26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 - Genoa, Italy
Süre: 27 Kas 201929 Kas 2019

Yayın serisi

Adı2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019

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???event.eventtypes.event.conference???26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
Ülke/BölgeItaly
ŞehirGenoa
Periyot27/11/1929/11/19

Bibliyografik not

Publisher Copyright:
© 2019 IEEE.

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