Özet
In this paper, a 2.7-2.9 GHz class-F power amplifier with 50-Watt output power, 75% power added efficiency (PAE), 12 dB gain and low harmonic content was designed and simulated by using CGHV40050F Gallium Nitride high electron mobility transistor (GaN HEMT) and NI AWR Microwave Office v14. Realizations are planned to be made on Rogers RT5880 dielectric material which has 0.508 mm thickness and 2.20 dielectric constant.
Orijinal dil | İngilizce |
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Ana bilgisayar yayını başlığı | ELECO 2019 - 11th International Conference on Electrical and Electronics Engineering |
Yayınlayan | Institute of Electrical and Electronics Engineers Inc. |
Sayfalar | 1088-1091 |
Sayfa sayısı | 4 |
ISBN (Elektronik) | 9786050112757 |
DOI'lar | |
Yayın durumu | Yayınlandı - Kas 2019 |
Etkinlik | 11th International Conference on Electrical and Electronics Engineering, ELECO 2019 - Bursa, Turkey Süre: 28 Kas 2019 → 30 Kas 2019 |
Yayın serisi
Adı | ELECO 2019 - 11th International Conference on Electrical and Electronics Engineering |
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???event.eventtypes.event.conference??? | 11th International Conference on Electrical and Electronics Engineering, ELECO 2019 |
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Ülke/Bölge | Turkey |
Şehir | Bursa |
Periyot | 28/11/19 → 30/11/19 |
Bibliyografik not
Publisher Copyright:© 2019 Chamber of Turkish Electrical Engineers.