A 180-nm X-Band Cryogenic CMOS LNA

Alican Caglar; Mustafa Berke Yelten

doi:10.1109/LMWC.2020.2979341

A 180-nm X-Band Cryogenic CMOS LNA

Alican Caglar
, Mustafa Berke Yelten^*

^*Bu çalışma için yazışmadan sorumlu yazar

Elektronik ve Hab.Müh.Bölümü

Istanbul Technical University
Interuniversitair Micro-Elektronica Centrum

Araştırma sonucu: Dergiye katkı › Makale › bilirkişi

25 Atıf (Scopus)

Özet

This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) X -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides S11 and S22 below -10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as -1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and -3 dBm IIP3. The presented work is the first implemented X -band cryogenic CMOS LNA in the literature.

Orijinal dil	İngilizce
Makale numarası	9043508
Sayfa (başlangıç-bitiş)	395-398
Sayfa sayısı	4
Dergi	IEEE Microwave and Wireless Components Letters
Hacim	30
Basın numarası	4
DOI'lar	https://doi.org/10.1109/LMWC.2020.2979341
Yayın durumu	Yayınlandı - Nis 2020

Bibliyografik not

Publisher Copyright:
© 2001-2012 IEEE.

Finansman

Manuscript received February 11, 2020; accepted March 4, 2020. Date of publication March 19, 2020; date of current version April 8, 2020. This work was supported by the Technological Research Council of Turkey under the project TÜB˙TAK 1001 215E080. (Corresponding author: Mustafa Berke Yelten.) Alican Çag˘lar was with the Department of Electronics and Communications Engineering, Istanbul Technical University, 34467 Istanbul, Turkey. He is now with IMEC-BEIOT, 3001 Leuven, Belgium (e-mail: [email protected]).

Finansörler	Finansör numarası
Technological Research Council of Turkey	TÜB˙TAK 1001 215E080

Belgeye Erişim

10.1109/LMWC.2020.2979341

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

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title = "A 180-nm X-Band Cryogenic CMOS LNA",

abstract = "This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) X -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides S11 and S22 below -10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as -1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and -3 dBm IIP3. The presented work is the first implemented X -band cryogenic CMOS LNA in the literature.",

keywords = "Complementary metal-oxide-semiconductor (CMOS), cryogenics, linearity, low-noise amplifier (LNA)",

author = "Alican Caglar and Yelten, \{Mustafa Berke\}",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2020",

month = apr,

doi = "10.1109/LMWC.2020.2979341",

language = "English",

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journal = "IEEE Microwave and Wireless Components Letters",

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T1 - A 180-nm X-Band Cryogenic CMOS LNA

AU - Caglar, Alican

AU - Yelten, Mustafa Berke

PY - 2020/4

Y1 - 2020/4

N2 - This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) X -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides S11 and S22 below -10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as -1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and -3 dBm IIP3. The presented work is the first implemented X -band cryogenic CMOS LNA in the literature.

AB - This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) X -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides S11 and S22 below -10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as -1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and -3 dBm IIP3. The presented work is the first implemented X -band cryogenic CMOS LNA in the literature.

KW - Complementary metal-oxide-semiconductor (CMOS)

KW - cryogenics

KW - linearity

KW - low-noise amplifier (LNA)

UR - https://www.scopus.com/pages/publications/85083461267

U2 - 10.1109/LMWC.2020.2979341

DO - 10.1109/LMWC.2020.2979341

M3 - Article

AN - SCOPUS:85083461267

SN - 1531-1309

VL - 30

SP - 395

EP - 398

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 4

M1 - 9043508

ER -

A 180-nm X-Band Cryogenic CMOS LNA

Özet

Bibliyografik not

Finansman

Belgeye Erişim

Diğer Dosyalar ve Linkler

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