A 180-nm X-Band Cryogenic CMOS LNA

Alican Caglar, Mustafa Berke Yelten*

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10 Atıf (Scopus)

Özet

This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) X -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides S11 and S22 below -10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as -1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and -3 dBm IIP3. The presented work is the first implemented X -band cryogenic CMOS LNA in the literature.

Orijinal dilİngilizce
Makale numarası9043508
Sayfa (başlangıç-bitiş)395-398
Sayfa sayısı4
DergiIEEE Microwave and Wireless Components Letters
Hacim30
Basın numarası4
DOI'lar
Yayın durumuYayınlandı - Nis 2020

Bibliyografik not

Publisher Copyright:
© 2001-2012 IEEE.

Finansman

Manuscript received February 11, 2020; accepted March 4, 2020. Date of publication March 19, 2020; date of current version April 8, 2020. This work was supported by the Technological Research Council of Turkey under the project TÜB˙TAK 1001 215E080. (Corresponding author: Mustafa Berke Yelten.) Alican Çag˘lar was with the Department of Electronics and Communications Engineering, Istanbul Technical University, 34467 Istanbul, Turkey. He is now with IMEC-BEIOT, 3001 Leuven, Belgium (e-mail: [email protected]).

FinansörlerFinansör numarası
Technological Research Council of TurkeyTÜB˙TAK 1001 215E080

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