A 0.18 μm CMOS X-band low noise amplifier for space applications

Nergiz Sahin; Mustafa Berke Yelten

doi:10.1109/NGCAS.2017.12

A 0.18 μm CMOS X-band low noise amplifier for space applications

Nergiz Sahin, Mustafa Berke Yelten

Elektronik ve Hab.Müh.Bölümü

Istanbul Technical University

Araştırma sonucu: ???type-name??? › Konferans katkısı › bilirkişi

6 Atıf (Scopus)

Özet

A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 μm UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.

Orijinal dil	İngilizce
Ana bilgisayar yayını başlığı	Proceedings - 2017 1st New Generation of CAS, NGCAS 2017
Yayınlayan	Institute of Electrical and Electronics Engineers Inc.
Sayfalar	205-208
Sayfa sayısı	4
ISBN (Elektronik)	9781509064472
DOI'lar	https://doi.org/10.1109/NGCAS.2017.12
Yayın durumu	Yayınlandı - 26 Eyl 2017
Etkinlik	1st New Generation of CAS, NGCAS 2017 - Genova, Italy Süre: 6 Eyl 2017 → 9 Eyl 2017

Yayın serisi

Adı	Proceedings - 2017 1st New Generation of CAS, NGCAS 2017

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	1st New Generation of CAS, NGCAS 2017
Ülke/Bölge	Italy
Şehir	Genova
Periyot	6/09/17 → 9/09/17

Bibliyografik not

Publisher Copyright:
© 2017 IEEE.

Finansman

This work was sponsored by the Technological Research Council of Turkey under the project TÜB TAK 1001 215E080 and stanbul Technical University Department of Scientific Research Projects under the project 39465.

Finansörler	Finansör numarası
Technological Research Council of Turkey	TÜB TAK 1001 215E080, 39465

Belgeye Erişim

10.1109/NGCAS.2017.12

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

@inproceedings{38f5bd13280541e5af26c7182d949534,

title = "A 0.18 μm CMOS X-band low noise amplifier for space applications",

abstract = "A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 μm UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.",

keywords = "Complementary metal oxide semiconductor (CMOS), Cryogenic, Low noise amplifier (LNA), Noise figure, Radiation",

author = "Nergiz Sahin and Yelten, {Mustafa Berke}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 1st New Generation of CAS, NGCAS 2017 ; Conference date: 06-09-2017 Through 09-09-2017",

year = "2017",

month = sep,

day = "26",

doi = "10.1109/NGCAS.2017.12",

language = "English",

series = "Proceedings - 2017 1st New Generation of CAS, NGCAS 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "205--208",

booktitle = "Proceedings - 2017 1st New Generation of CAS, NGCAS 2017",

address = "United States",

}

Sahin, N & Yelten, MB 2017, A 0.18 μm CMOS X-band low noise amplifier for space applications. in Proceedings - 2017 1st New Generation of CAS, NGCAS 2017., 8052305, Proceedings - 2017 1st New Generation of CAS, NGCAS 2017, Institute of Electrical and Electronics Engineers Inc., pp. 205-208, 1st New Generation of CAS, NGCAS 2017, Genova, Italy, 6/09/17. https://doi.org/10.1109/NGCAS.2017.12

A 0.18 μm CMOS X-band low noise amplifier for space applications. / Sahin, Nergiz; Yelten, Mustafa Berke.
Proceedings - 2017 1st New Generation of CAS, NGCAS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 205-208 8052305 (Proceedings - 2017 1st New Generation of CAS, NGCAS 2017).

Araştırma sonucu: ???type-name??? › Konferans katkısı › bilirkişi

TY - GEN

T1 - A 0.18 μm CMOS X-band low noise amplifier for space applications

AU - Sahin, Nergiz

AU - Yelten, Mustafa Berke

PY - 2017/9/26

Y1 - 2017/9/26

N2 - A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 μm UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.

AB - A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 μm UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.

KW - Complementary metal oxide semiconductor (CMOS)

KW - Cryogenic

KW - Low noise amplifier (LNA)

KW - Noise figure

KW - Radiation

UR - http://www.scopus.com/inward/record.url?scp=85034428402&partnerID=8YFLogxK

U2 - 10.1109/NGCAS.2017.12

DO - 10.1109/NGCAS.2017.12

M3 - Conference contribution

AN - SCOPUS:85034428402

T3 - Proceedings - 2017 1st New Generation of CAS, NGCAS 2017

SP - 205

EP - 208

BT - Proceedings - 2017 1st New Generation of CAS, NGCAS 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1st New Generation of CAS, NGCAS 2017

Y2 - 6 September 2017 through 9 September 2017

ER -

A 0.18 μm CMOS X-band low noise amplifier for space applications

Özet

Yayın serisi

???event.eventtypes.event.conference???

Bibliyografik not

Finansman

Belgeye Erişim

Diğer Dosyalar ve Linkler

Parmak izi

Alıntı Yap