3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications

Hakan Karaagac; V. J. Logeeswaran; M. Saif Islam

doi:10.1117/12.945974

3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications

Hakan Karaagac^*
, V. J. Logeeswaran
, M. Saif Islam

^*Bu çalışma için yazışmadan sorumlu yazar

University of California at Davis

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › bilirkişi

Özet

In this paper, high aspect ratio vertically oriented p-silicon (100) micropillars and microwalls were fabricated using the deep reactive ion etching (DRIE) process with the BOSCH recipe of cyclical passivation and etching. Two different patterns were etched; uniform pillar arrays of dimensions ~15μm (height) x 2μm (diameter) and wall arrays of dimensions ~1.5μm (width) x 25μm (height). Three-dimensional (3D) heterostructures of n-ZnO/p-Si heterostructures were fabricated from growing hydrothermally dense arrays of ZnO nanowires (290-400 nm in length and 48-80 nm in diameter) and depositing Aluminum-ZnO (AZO) thin film onto the high aspect ratio vertically oriented p-silicon micropillars and microwalls. The performances of the fabricated heterostructure optoelectronic devices were characterized for different applications including solar cells, photodetectors and field ionization gas sensors.

Orijinal dil	İngilizce
Ana bilgisayar yayını başlığı	Nanoepitaxy
Ana bilgisayar yayını alt yazısı	Materials and Devices IV
DOI'lar	https://doi.org/10.1117/12.945974
Yayın durumu	Yayınlandı - 2012
Harici olarak yayınlandı	Evet
Etkinlik	Nanoepitaxy: Materials and Devices IV - San Diego, CA, United States Süre: 15 Ağu 2012 → 16 Ağu 2012

Yayın serisi

Adı	Proceedings of SPIE - The International Society for Optical Engineering
Hacim	8467
ISSN (Basılı)	0277-786X

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???event.eventtypes.event.conference???	Nanoepitaxy: Materials and Devices IV
Ülke/Bölge	United States
Şehir	San Diego, CA
Periyot	15/08/12 → 16/08/12

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Belgeye Erişim

10.1117/12.945974

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

@inproceedings{7ba0b9333d0b4353b7ef531ad92f95ed,

title = "3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications",

abstract = "In this paper, high aspect ratio vertically oriented p-silicon (100) micropillars and microwalls were fabricated using the deep reactive ion etching (DRIE) process with the BOSCH recipe of cyclical passivation and etching. Two different patterns were etched; uniform pillar arrays of dimensions \textasciitilde{}15μm (height) x 2μm (diameter) and wall arrays of dimensions \textasciitilde{}1.5μm (width) x 25μm (height). Three-dimensional (3D) heterostructures of n-ZnO/p-Si heterostructures were fabricated from growing hydrothermally dense arrays of ZnO nanowires (290-400 nm in length and 48-80 nm in diameter) and depositing Aluminum-ZnO (AZO) thin film onto the high aspect ratio vertically oriented p-silicon micropillars and microwalls. The performances of the fabricated heterostructure optoelectronic devices were characterized for different applications including solar cells, photodetectors and field ionization gas sensors.",

keywords = "Gas sensor, Nanowires, Si micro-pillar/wall, Solar cell, Uv photodetector",

author = "Hakan Karaagac and Logeeswaran, \{V. J.\} and Islam, \{M. Saif\}",

year = "2012",

doi = "10.1117/12.945974",

language = "English",

isbn = "9780819491848",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Nanoepitaxy",

note = "Nanoepitaxy: Materials and Devices IV ; Conference date: 15-08-2012 Through 16-08-2012",

}

Karaagac, H, Logeeswaran, VJ & Islam, MS 2012, 3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications. in Nanoepitaxy: Materials and Devices IV., 84670Y, Proceedings of SPIE - The International Society for Optical Engineering, hac. 8467, Nanoepitaxy: Materials and Devices IV, San Diego, CA, United States, 15/08/12. https://doi.org/10.1117/12.945974

3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications. / Karaagac, Hakan; Logeeswaran, V. J.; Islam, M. Saif.
Nanoepitaxy: Materials and Devices IV. 2012. 84670Y (Proceedings of SPIE - The International Society for Optical Engineering; Hac. 8467).

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › bilirkişi

TY - GEN

T1 - 3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications

AU - Karaagac, Hakan

AU - Logeeswaran, V. J.

AU - Islam, M. Saif

PY - 2012

Y1 - 2012

N2 - In this paper, high aspect ratio vertically oriented p-silicon (100) micropillars and microwalls were fabricated using the deep reactive ion etching (DRIE) process with the BOSCH recipe of cyclical passivation and etching. Two different patterns were etched; uniform pillar arrays of dimensions ~15μm (height) x 2μm (diameter) and wall arrays of dimensions ~1.5μm (width) x 25μm (height). Three-dimensional (3D) heterostructures of n-ZnO/p-Si heterostructures were fabricated from growing hydrothermally dense arrays of ZnO nanowires (290-400 nm in length and 48-80 nm in diameter) and depositing Aluminum-ZnO (AZO) thin film onto the high aspect ratio vertically oriented p-silicon micropillars and microwalls. The performances of the fabricated heterostructure optoelectronic devices were characterized for different applications including solar cells, photodetectors and field ionization gas sensors.

AB - In this paper, high aspect ratio vertically oriented p-silicon (100) micropillars and microwalls were fabricated using the deep reactive ion etching (DRIE) process with the BOSCH recipe of cyclical passivation and etching. Two different patterns were etched; uniform pillar arrays of dimensions ~15μm (height) x 2μm (diameter) and wall arrays of dimensions ~1.5μm (width) x 25μm (height). Three-dimensional (3D) heterostructures of n-ZnO/p-Si heterostructures were fabricated from growing hydrothermally dense arrays of ZnO nanowires (290-400 nm in length and 48-80 nm in diameter) and depositing Aluminum-ZnO (AZO) thin film onto the high aspect ratio vertically oriented p-silicon micropillars and microwalls. The performances of the fabricated heterostructure optoelectronic devices were characterized for different applications including solar cells, photodetectors and field ionization gas sensors.

KW - Gas sensor

KW - Nanowires

KW - Si micro-pillar/wall

KW - Solar cell

KW - Uv photodetector

UR - https://www.scopus.com/pages/publications/84872116674

U2 - 10.1117/12.945974

DO - 10.1117/12.945974

M3 - Conference contribution

AN - SCOPUS:84872116674

SN - 9780819491848

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Nanoepitaxy

T2 - Nanoepitaxy: Materials and Devices IV

Y2 - 15 August 2012 through 16 August 2012

ER -

3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications

Özet

Yayın serisi

???event.eventtypes.event.conference???

BM SKH

Belgeye Erişim

Diğer Dosyalar ve Linkler

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