3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications

Hakan Karaagac*, V. J. Logeeswaran, M. Saif Islam

*Bu çalışma için yazışmadan sorumlu yazar

Araştırma sonucu: ???type-name???Konferans katkısıbilirkişi

Özet

In this paper, high aspect ratio vertically oriented p-silicon (100) micropillars and microwalls were fabricated using the deep reactive ion etching (DRIE) process with the BOSCH recipe of cyclical passivation and etching. Two different patterns were etched; uniform pillar arrays of dimensions ~15μm (height) x 2μm (diameter) and wall arrays of dimensions ~1.5μm (width) x 25μm (height). Three-dimensional (3D) heterostructures of n-ZnO/p-Si heterostructures were fabricated from growing hydrothermally dense arrays of ZnO nanowires (290-400 nm in length and 48-80 nm in diameter) and depositing Aluminum-ZnO (AZO) thin film onto the high aspect ratio vertically oriented p-silicon micropillars and microwalls. The performances of the fabricated heterostructure optoelectronic devices were characterized for different applications including solar cells, photodetectors and field ionization gas sensors.

Orijinal dilİngilizce
Ana bilgisayar yayını başlığıNanoepitaxy
Ana bilgisayar yayını alt yazısıMaterials and Devices IV
DOI'lar
Yayın durumuYayınlandı - 2012
Harici olarak yayınlandıEvet
EtkinlikNanoepitaxy: Materials and Devices IV - San Diego, CA, United States
Süre: 15 Ağu 201216 Ağu 2012

Yayın serisi

AdıProceedings of SPIE - The International Society for Optical Engineering
Hacim8467
ISSN (Basılı)0277-786X

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???event.eventtypes.event.conference???Nanoepitaxy: Materials and Devices IV
Ülke/BölgeUnited States
ŞehirSan Diego, CA
Periyot15/08/1216/08/12

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