Özet
In this paper, a wideband driver amplifier (DA) with flat gain is presented for driver stage in high power amplifier. The presented driver amplifier consists of 11 dB gain block, positive slope equalizer and power amplifier stage with 24 dB small signal gain. The designed DA has 500 mW (27 dBm) output power and operates along 2-6 GHz frequency band. This DA is designed to be implemented on the Rogers RT5870 dielectric substrate. MiniCircuit Lee29+ transistor and GaN based Qorvo TGA2597 MMIC are used in the design. The performance of the designed DA was evaluated by making small signal simulations. After simulations the circuit was realized and measured. The DA offers a small signal gain of 35 dB over the frequency band of 2-6 GHz.
Tercüme edilen katkı başlığı | A 2-6 GHz Driver Amplifier with 27 dBm Output Power and 35 dB Gain |
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Orijinal dil | Türkçe |
Ana bilgisayar yayını başlığı | 32nd IEEE Conference on Signal Processing and Communications Applications, SIU 2024 - Proceedings |
Yayınlayan | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Elektronik) | 9798350388961 |
DOI'lar | |
Yayın durumu | Yayınlandı - 2024 |
Etkinlik | 32nd IEEE Conference on Signal Processing and Communications Applications, SIU 2024 - Mersin, Turkey Süre: 15 May 2024 → 18 May 2024 |
Yayın serisi
Adı | 32nd IEEE Conference on Signal Processing and Communications Applications, SIU 2024 - Proceedings |
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???event.eventtypes.event.conference??? | 32nd IEEE Conference on Signal Processing and Communications Applications, SIU 2024 |
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Ülke/Bölge | Turkey |
Şehir | Mersin |
Periyot | 15/05/24 → 18/05/24 |
Bibliyografik not
Publisher Copyright:© 2024 IEEE.
Keywords
- driver amplifier
- GaN (HEMT)
- power amplifier