0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi

Mustafa Sayginer; Metin Yazgi; Hakan Kuntman

doi:10.1109/SIU.2011.5929783

0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi

Mustafa Sayginer^*, Metin Yazgi, Hakan Kuntman

^*Bu çalışma için yazışmadan sorumlu yazar

Elektronik ve Hab.Müh.Bölümü

Istanbul Technical University

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › bilirkişi

4 Atıf (Scopus)

Özet

In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P_1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.

Tercüme edilen katkı başlığı	0.1 - 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations
Orijinal dil	Türkçe
Ana bilgisayar yayını başlığı	2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011
Sayfalar	841-844
Sayfa sayısı	4
DOI'lar	https://doi.org/10.1109/SIU.2011.5929783
Yayın durumu	Yayınlandı - 2011
Etkinlik	2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011 - Antalya, Turkey Süre: 20 Nis 2011 → 22 Nis 2011

Yayın serisi

Adı	2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011
Ülke/Bölge	Turkey
Şehir	Antalya
Periyot	20/04/11 → 22/04/11

Belgeye Erişim

10.1109/SIU.2011.5929783

Diğer Dosyalar ve Linkler

Link to publication in Scopus

Alıntı Yap

Sayginer, M., Yazgi, M., & Kuntman, H. (2011). 0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. In 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011 (pp. 841-844). Makale 5929783 (2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011). https://doi.org/10.1109/SIU.2011.5929783

Sayginer, Mustafa ; Yazgi, Metin ; Kuntman, Hakan. / 0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011. 2011. pp. 841-844 (2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011).

@inproceedings{ef9de6352af24b7dbce18f1f3c1ae5d5,

title = "0.1 - 10 GHz 0.5W y{\"u}ksek ver{\.i}ml{\.i} tek trans{\.i}st{\"o} rl{\"u} GaAs pHEMT g{\"u}{\c c} kuvvetlend{\.i}r{\.i}c{\.i}s{\.i}n{\.l} n y{\"u}k taramasi y{\"o}ntem{\.i} kullanilarak tasarimi",

abstract = "In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.",

author = "Mustafa Sayginer and Metin Yazgi and Hakan Kuntman",

year = "2011",

doi = "10.1109/SIU.2011.5929783",

language = "T{\"u}rk{\c c}e",

isbn = "9781457704635",

series = "2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011",

pages = "841--844",

booktitle = "2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011",

note = "2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011 ; Conference date: 20-04-2011 Through 22-04-2011",

}

Sayginer, M, Yazgi, M & Kuntman, H 2011, 0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. in 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011., 5929783, 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011, pp. 841-844, 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011, Antalya, Turkey, 20/04/11. https://doi.org/10.1109/SIU.2011.5929783

0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. / Sayginer, Mustafa; Yazgi, Metin; Kuntman, Hakan.
2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011. 2011. p. 841-844 5929783 (2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011).

Araştırma sonucu: Kitap/Rapor/Konferans Bildirisinde Bölüm › Konferans katkısı › bilirkişi

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AU - Sayginer, Mustafa

AU - Yazgi, Metin

AU - Kuntman, Hakan

PY - 2011

Y1 - 2011

N2 - In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.

AB - In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.

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Sayginer M, Yazgi M, Kuntman H. 0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. In 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011. 2011. p. 841-844. 5929783. (2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011). doi: 10.1109/SIU.2011.5929783

0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi

Özet

Yayın serisi

???event.eventtypes.event.conference???

Belgeye Erişim

Diğer Dosyalar ve Linkler

Parmak izi

Alıntı Yap