Abstract
Al-doped n-ZnO/p-Si heterojunctions were fabricated using a sol-gel dip coating technique at 700°C, in a nitrogen ambient. The structural, optical, and electrical properties of ZnO:Al thin films, and the heterojunction properties of ZnO:Al/p-Si were investigated with respect to the effects of Al doping concentration. Hexagonal nanostructured ZnO: Al thin films with a 1.2% and a 1.6 at.% Al concentration exhibited high optical transmittance in visible ranges. Electrical resistivity changed with respect to Al doping concentration, and minimum resistivity was detected at a 1.2 at.% Al concentration. The ZnO:Al/p-Si heterojunction properties were analysed using current-voltage (I-V) measurements at four different Al concentrations, ranging from 0.8 to 1.6 (at.%). The ZnO:Al/p-Si heterojunctions exhibited diode-like rectifying behaviour. Under UV illumination, the photoelectric behaviour observed for the ZnO:Al/p-Si heterojunctions was diode.
| Original language | English |
|---|---|
| Pages (from-to) | 620-627 |
| Number of pages | 8 |
| Journal | Journal of Sol-Gel Science and Technology |
| Volume | 61 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 2012 |
Funding
Acknowledgements This study is supported by TUBITAK, as a research project with a project number 107M545.
| Funders | Funder number |
|---|---|
| TUBITAK | 107M545 |
Keywords
- Coating process
- Heterojunction
- Sol-gel
- Thin films