Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

M. H.Yu Seyidov; R. A. Suleymanov; F. Salehli; S. S. Babayev; T. G. Mammadov; A. I. Nadjafov; G. M. Sharifov

doi:10.1134/S1063783409030226

Unusual memory effects in an incommensurate phase of the TlInS₂ ferroelectric semiconductor

M. H.Yu Seyidov, R. A. Suleymanov, F. Salehli, S. S. Babayev, T. G. Mammadov, A. I. Nadjafov, G. M. Sharifov

Faculty of Science and Letters

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS₂ crystals selected from different technological batches and in TlInS₂: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.

Original language	English
Pages (from-to)	568-576
Number of pages	9
Journal	Physics of the Solid State
Volume	51
Issue number	3
DOIs	https://doi.org/10.1134/S1063783409030226
Publication status	Published - Mar 2009

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abstract = "The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.",

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AU - Seyidov, M. H.Yu

AU - Suleymanov, R. A.

AU - Salehli, F.

AU - Babayev, S. S.

AU - Mammadov, T. G.

AU - Nadjafov, A. I.

AU - Sharifov, G. M.

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N2 - The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.

AB - The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.

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Unusual memory effects in an incommensurate phase of the TlInS₂ ferroelectric semiconductor

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