Abstract
This paper presents the design of a Gallium Nitride (GaN) transistor-based ultra-wideband (UWB) high-efficiency power amplifier (PA) with 25W (44 dBm) output power operating in the 2–6 GHz frequency band. The design of the matching circuits is based on a simplified systematic approach utilizing the target impedance trajectory. The Macom CGHV1F025S model GaN transistor and Rogers RT5870 model substrate are used in the design. The experimental results show that performance of the implemented PA offers 9.8 dB power gain, 43.8 dBm output power, and power-added efficiency (PAE) between 41% and 57% in the 2–6 GHz band.
| Original language | English |
|---|---|
| Pages (from-to) | 755-766 |
| Number of pages | 12 |
| Journal | Electrica |
| Volume | 24 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Sept 2024 |
Bibliographical note
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Keywords
- Gallium Nitride (GaN) (HEMT)
- high power
- high-efficiency power amplifier
- wideband power amplifier