Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

Sadik Ilik; Mustafa Berke Yelten

doi:10.1109/TDMR.2022.3227766

Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

Sadik Ilik, Mustafa Berke Yelten^*

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.

Original language	English
Pages (from-to)	51-57
Number of pages	7
Journal	IEEE Transactions on Device and Materials Reliability
Volume	23
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2022.3227766
Publication status	Published - 1 Mar 2023

Bibliographical note

Publisher Copyright:
© 2001-2011 IEEE.

Keywords

amplifier
analog circuits
cascode
common gate
common source
ionizing radiation
TID
Total ionizing dose

Access to Document

10.1109/TDMR.2022.3227766

Cite this

@article{e1a118a244134d3eb4977ca55158a180,

title = "Total Ionizing Dose (TID) Impact on Basic Amplifier Stages",

abstract = "This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.",

keywords = "amplifier, analog circuits, cascode, common gate, common source, ionizing radiation, TID, Total ionizing dose",

author = "Sadik Ilik and Yelten, \{Mustafa Berke\}",

note = "Publisher Copyright: {\textcopyright} 2001-2011 IEEE.",

year = "2023",

month = mar,

day = "1",

doi = "10.1109/TDMR.2022.3227766",

language = "English",

volume = "23",

pages = "51--57",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

AU - Ilik, Sadik

AU - Yelten, Mustafa Berke

PY - 2023/3/1

Y1 - 2023/3/1

N2 - This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.

AB - This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.

KW - amplifier

KW - analog circuits

KW - cascode

KW - common gate

KW - common source

KW - ionizing radiation

KW - TID

KW - Total ionizing dose

UR - https://www.scopus.com/pages/publications/85144752564

U2 - 10.1109/TDMR.2022.3227766

DO - 10.1109/TDMR.2022.3227766

M3 - Article

AN - SCOPUS:85144752564

SN - 1530-4388

VL - 23

SP - 51

EP - 57

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 1

ER -

Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this