Abstract
This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 51-57 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 23 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Mar 2023 |
Bibliographical note
Publisher Copyright:© 2001-2011 IEEE.
Keywords
- amplifier
- analog circuits
- cascode
- common gate
- common source
- ionizing radiation
- TID
- Total ionizing dose
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