Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

Sadik Ilik; Mustafa Berke Yelten

doi:10.1109/TDMR.2022.3227766

Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

Sadik Ilik, Mustafa Berke Yelten^*

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.

Original language	English
Pages (from-to)	51-57
Number of pages	7
Journal	IEEE Transactions on Device and Materials Reliability
Volume	23
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2022.3227766
Publication status	Published - 1 Mar 2023

Bibliographical note

Publisher Copyright:
© 2001-2011 IEEE.

Keywords

amplifier
analog circuits
cascode
common gate
common source
ionizing radiation
TID
Total ionizing dose

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title = "Total Ionizing Dose (TID) Impact on Basic Amplifier Stages",

abstract = "This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.",

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author = "Sadik Ilik and Yelten, {Mustafa Berke}",

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AB - This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.

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KW - analog circuits

KW - cascode

KW - common gate

KW - common source

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Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

Abstract

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Keywords

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