Ti₃C₂O₂ MXene single-layer as a nanoscale transport device

We considered Ti₃C₂O₂ MXene single-layers with stepped edges as a nanoscale field effect transistor (FET) device. Our model device contains stepped edges at the interface of Ti₃C₂O₂ and Ti₂CO₂ segments, and a top gate. We suggest that Ti₂CO₂ semiconducting device region can be obtained by etching the central part of a Ti₃C₂O₂ single-layer. We determined the device characteristic of the proposed device in non-equilibrium Green’s function (NEGF) calculations and observed the transistor behavior. The current through the device is controllable by the total amount of accumulated charge on the gate electrode. Our findings should be applicable to a large number of MXenes: Starting from M₃C₂O₂ MXene single-layers, nanoscale FETs could be produced using conventional mask and etching lithography techniques.