Thermosize potentials in semiconductors

S. Karabetoglu; A. Sisman

doi:10.1016/j.physleta.2017.06.038

Thermosize potentials in semiconductors

S. Karabetoglu, A. Sisman^*

^*Corresponding author for this work

Energy Institute

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A thermosize junction consists of two different sized structures made using the same material. Classical and quantum thermosize effects (CTSEs and QTSEs), which are opposite to each other, induce a thermosize potential in a thermosize junction. A semi-analytical method is proposed to calculate thermosize potentials in wide ranges of degeneracy and confinement by considering both CTSEs and QTSEs in thermosize junctions made using semiconductors. Dependencies of thermosize potential on temperature, size, and degeneracy are examined. It is shown that a potential difference in millivolt scale can be induced as a combined effect of CTS and QTS. The highest potential is obtained in nondegenerate limit where the full analytical solution is obtained. The model can be used to design semiconductor thermosize devices for a possible experimental verification of CTSEs and QTSEs, which may lead to new nano energy conversion devices.

Original language	English
Pages (from-to)	2704-2708
Number of pages	5
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	381
Issue number	33
DOIs	https://doi.org/10.1016/j.physleta.2017.06.038
Publication status	Published - 5 Sept 2017

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

Keywords

Classical thermosize effects
Quantum thermosize effects
Thermosize effects

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10.1016/j.physleta.2017.06.038

Cite this

@article{1d0a381ad1ed48fb9286b46114b796c5,

title = "Thermosize potentials in semiconductors",

abstract = "A thermosize junction consists of two different sized structures made using the same material. Classical and quantum thermosize effects (CTSEs and QTSEs), which are opposite to each other, induce a thermosize potential in a thermosize junction. A semi-analytical method is proposed to calculate thermosize potentials in wide ranges of degeneracy and confinement by considering both CTSEs and QTSEs in thermosize junctions made using semiconductors. Dependencies of thermosize potential on temperature, size, and degeneracy are examined. It is shown that a potential difference in millivolt scale can be induced as a combined effect of CTS and QTS. The highest potential is obtained in nondegenerate limit where the full analytical solution is obtained. The model can be used to design semiconductor thermosize devices for a possible experimental verification of CTSEs and QTSEs, which may lead to new nano energy conversion devices.",

keywords = "Classical thermosize effects, Quantum thermosize effects, Thermosize effects",

author = "S. Karabetoglu and A. Sisman",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = sep,

day = "5",

doi = "10.1016/j.physleta.2017.06.038",

language = "English",

volume = "381",

pages = "2704--2708",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier B.V.",

number = "33",

}

TY - JOUR

T1 - Thermosize potentials in semiconductors

AU - Karabetoglu, S.

AU - Sisman, A.

PY - 2017/9/5

Y1 - 2017/9/5

N2 - A thermosize junction consists of two different sized structures made using the same material. Classical and quantum thermosize effects (CTSEs and QTSEs), which are opposite to each other, induce a thermosize potential in a thermosize junction. A semi-analytical method is proposed to calculate thermosize potentials in wide ranges of degeneracy and confinement by considering both CTSEs and QTSEs in thermosize junctions made using semiconductors. Dependencies of thermosize potential on temperature, size, and degeneracy are examined. It is shown that a potential difference in millivolt scale can be induced as a combined effect of CTS and QTS. The highest potential is obtained in nondegenerate limit where the full analytical solution is obtained. The model can be used to design semiconductor thermosize devices for a possible experimental verification of CTSEs and QTSEs, which may lead to new nano energy conversion devices.

AB - A thermosize junction consists of two different sized structures made using the same material. Classical and quantum thermosize effects (CTSEs and QTSEs), which are opposite to each other, induce a thermosize potential in a thermosize junction. A semi-analytical method is proposed to calculate thermosize potentials in wide ranges of degeneracy and confinement by considering both CTSEs and QTSEs in thermosize junctions made using semiconductors. Dependencies of thermosize potential on temperature, size, and degeneracy are examined. It is shown that a potential difference in millivolt scale can be induced as a combined effect of CTS and QTS. The highest potential is obtained in nondegenerate limit where the full analytical solution is obtained. The model can be used to design semiconductor thermosize devices for a possible experimental verification of CTSEs and QTSEs, which may lead to new nano energy conversion devices.

KW - Classical thermosize effects

KW - Quantum thermosize effects

KW - Thermosize effects

UR - http://www.scopus.com/inward/record.url?scp=85021755547&partnerID=8YFLogxK

U2 - 10.1016/j.physleta.2017.06.038

DO - 10.1016/j.physleta.2017.06.038

M3 - Article

AN - SCOPUS:85021755547

SN - 0375-9601

VL - 381

SP - 2704

EP - 2708

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 33

ER -

Thermosize potentials in semiconductors

Abstract

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Keywords

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