Thermally induced structural evolution and nanoscale interfacial dynamics in Bi-Sb-Te layered nanostructures

Parivash Moradifar*, Tao Wang, Nadire Nayir, Tiva Sharifi, Ke Wang, Pulickel Ajayan, Adri C.T. van Duin, Nasim Alem*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Layered chalcogenides, including Bi-Sb-Te ternary alloys and heterostructures, are renowned as thermoelectric and topological insulators and have recently been highlighted as plasmonic building blocks beyond noble metals. We conduct joint in situ transmission electron microscopy and density functional theory calculations to investigate the temperature-dependent nanoscale dynamics and interfacial properties, identifying the role of native defects and edge configurations in the anisotropic sublimation of Bi2Te3-Sb2Te3 heterostructures and Sb2-xBixTe3 alloys. We report structural dynamics, including edge evolution, layer-by-layer sublimation, and the formation and coalescence of thermally induced polygonal nanopores. These nanopores are initiated by preferential dissociation of tellurium, reducing thermal stability in heterostructures. Triangular and quasi-hexagonal configurations dominate nanopore structures in heterostructures. Our calculations reveal antisite defects (TeSb and TeBi) as key players in defect-assisted sublimation. These findings enhance our understanding of nanoscale dynamics and assist in designing tunable low-dimensional chalcogenides.

Original languageEnglish
Pages (from-to)3672-3687
Number of pages16
JournalMatter
Volume7
Issue number10
DOIs
Publication statusPublished - 2 Oct 2024

Bibliographical note

Publisher Copyright:
© 2024 Elsevier Inc.

Keywords

  • anisotropic sublimation
  • BiTe-SbTe heterostructure
  • density functional theory
  • DFT
  • in situ TEM
  • in situ transmission electron microscopy
  • interfaces
  • low-dimensional tunable chalcogenides
  • MAP 3: Understanding;
  • SbBiTe alloy
  • structural dynamics
  • thermally induced defects
  • topological insulators

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