The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

S. A. Suliman; N. Gallogunta; L. Trabzon; J. Hao; G. Dolny; R. Ridley; T. Grebs; J. Benjamin; C. Kocon; J. Zeng; C. M. Knoedler; M. Horn; O. O. Awadelkarim; S. J. Fonash; J. Ruzyllo

doi:10.1109/RELPHY.2001.922920

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

S. A. Suliman, N. Gallogunta, L. Trabzon, J. Hao, G. Dolny, R. Ridley, T. Grebs, J. Benjamin, C. Kocon, J. Zeng, C. M. Knoedler, M. Horn, O. O. Awadelkarim, S. J. Fonash, J. Ruzyllo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Citations (Scopus)

Abstract

We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of the trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy, this is shown to result from gate-oxide growth nonuniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on n-UMOSFET performance and hot electron stress reliability as functions of the p-well doping.

Original language	English
Title of host publication	2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	308-314
Number of pages	7
ISBN (Electronic)	0780365879
DOIs	https://doi.org/10.1109/RELPHY.2001.922920
Publication status	Published - 2001
Externally published	Yes
Event	39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States Duration: 30 Apr 2001 → 3 May 2001

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2001-January
ISSN (Print)	1541-7026

Conference

Conference	39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
Country/Territory	United States
City	Orlando
Period	30/04/01 → 3/05/01

Bibliographical note

Publisher Copyright:
© 2001 IEEE.

Keywords

Charge measurement
Charge pumps
Cleaning
Current measurement
Electric variables measurement
Electron mobility
Etching
FETs
Geometry
Stress measurement

Access to Document

10.1109/RELPHY.2001.922920

Cite this

Suliman, S. A., Gallogunta, N., Trabzon, L., Hao, J., Dolny, G., Ridley, R., Grebs, T., Benjamin, J., Kocon, C., Zeng, J., Knoedler, C. M., Horn, M., Awadelkarim, O. O., Fonash, S. J., & Ruzyllo, J. (2001). The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual (pp. 308-314). Article 922920 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2001-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2001.922920

Suliman, S. A. ; Gallogunta, N. ; Trabzon, L. et al. / The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 308-314 (IEEE International Reliability Physics Symposium Proceedings).

@inproceedings{be92c3665e984b92beadb2451fc89f6f,

title = "The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs",

abstract = "We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of the trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy, this is shown to result from gate-oxide growth nonuniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on n-UMOSFET performance and hot electron stress reliability as functions of the p-well doping.",

keywords = "Charge measurement, Charge pumps, Cleaning, Current measurement, Electric variables measurement, Electron mobility, Etching, FETs, Geometry, Stress measurement",

author = "Suliman, {S. A.} and N. Gallogunta and L. Trabzon and J. Hao and G. Dolny and R. Ridley and T. Grebs and J. Benjamin and C. Kocon and J. Zeng and Knoedler, {C. M.} and M. Horn and Awadelkarim, {O. O.} and Fonash, {S. J.} and J. Ruzyllo",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 ; Conference date: 30-04-2001 Through 03-05-2001",

year = "2001",

doi = "10.1109/RELPHY.2001.922920",

language = "English",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "308--314",

booktitle = "2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual",

address = "United States",

}

Suliman, SA, Gallogunta, N, Trabzon, L, Hao, J, Dolny, G, Ridley, R, Grebs, T, Benjamin, J, Kocon, C, Zeng, J, Knoedler, CM, Horn, M, Awadelkarim, OO, Fonash, SJ & Ruzyllo, J 2001, The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. in 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual., 922920, IEEE International Reliability Physics Symposium Proceedings, vol. 2001-January, Institute of Electrical and Electronics Engineers Inc., pp. 308-314, 39th Annual IEEE International Reliability Physics Symposium, IRPS 2001, Orlando, United States, 30/04/01. https://doi.org/10.1109/RELPHY.2001.922920

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. / Suliman, S. A.; Gallogunta, N.; Trabzon, L. et al.
2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc., 2001. p. 308-314 922920 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2001-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

AU - Suliman, S. A.

AU - Gallogunta, N.

AU - Trabzon, L.

AU - Hao, J.

AU - Dolny, G.

AU - Ridley, R.

AU - Grebs, T.

AU - Benjamin, J.

AU - Kocon, C.

AU - Zeng, J.

AU - Knoedler, C. M.

AU - Horn, M.

AU - Awadelkarim, O. O.

AU - Fonash, S. J.

AU - Ruzyllo, J.

PY - 2001

Y1 - 2001

N2 - We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of the trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy, this is shown to result from gate-oxide growth nonuniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on n-UMOSFET performance and hot electron stress reliability as functions of the p-well doping.

AB - We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of the trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy, this is shown to result from gate-oxide growth nonuniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on n-UMOSFET performance and hot electron stress reliability as functions of the p-well doping.

KW - Charge measurement

KW - Charge pumps

KW - Cleaning

KW - Current measurement

KW - Electric variables measurement

KW - Electron mobility

KW - Etching

KW - FETs

KW - Geometry

KW - Stress measurement

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DO - 10.1109/RELPHY.2001.922920

M3 - Conference contribution

AN - SCOPUS:51049094867

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 308

EP - 314

BT - 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th Annual IEEE International Reliability Physics Symposium, IRPS 2001

Y2 - 30 April 2001 through 3 May 2001

ER -

Suliman SA, Gallogunta N, Trabzon L, Hao J, Dolny G, Ridley R et al. The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc. 2001. p. 308-314. 922920. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/RELPHY.2001.922920

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Abstract

Publication series

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Bibliographical note

Keywords

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