The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2 and TIGaSe2

S. S. Babaev; E. Başaran; T. G. Mammadov; F. A. Mikailov; F. M. Salehli; Mirhasan Yu Seyidov; R. A. Suleymanov

doi:10.1088/0953-8984/17/12/020

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂ and TIGaSe₂

S. S. Babaev, E. Başaran, T. G. Mammadov, F. A. Mikailov, F. M. Salehli, Mirhasan Yu Seyidov, R. A. Suleymanov^*

^*Corresponding author for this work

Faculty of Science and Letters

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The temperature dependences of the dielectric constants of the ferroelectric semiconductors TlInS₂ and TlGaSe₂ have been studied following their annealing within the incommensurate phase. Unusual memory effects accompanied by both a remarkable inflection of the temperature dependence curves in the incommensurate phase and various shifts of the incommensurate (T_i) and commensurate (T_c) phase transition temperatures have been revealed in both crystals. The observed effects are explained on the basis of a defect density wave model taking into account the interaction of modulation waves with charge carriers localized at impurity states. The thermally activated population of these states during the heating or cooling processes is responsible for the changes of the phase transition temperatures.

Original language	English
Pages (from-to)	1985-1993
Number of pages	9
Journal	Journal of Physics Condensed Matter
Volume	17
Issue number	12
DOIs	https://doi.org/10.1088/0953-8984/17/12/020
Publication status	Published - 30 Mar 2005

Access to Document

10.1088/0953-8984/17/12/020

Cite this

@article{4e57f522c9164cd8a7bdf32d537a07bb,

title = "The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2 and TIGaSe2",

abstract = "The temperature dependences of the dielectric constants of the ferroelectric semiconductors TlInS2 and TlGaSe2 have been studied following their annealing within the incommensurate phase. Unusual memory effects accompanied by both a remarkable inflection of the temperature dependence curves in the incommensurate phase and various shifts of the incommensurate (Ti) and commensurate (Tc) phase transition temperatures have been revealed in both crystals. The observed effects are explained on the basis of a defect density wave model taking into account the interaction of modulation waves with charge carriers localized at impurity states. The thermally activated population of these states during the heating or cooling processes is responsible for the changes of the phase transition temperatures.",

author = "Babaev, {S. S.} and E. Ba{\c s}aran and Mammadov, {T. G.} and Mikailov, {F. A.} and Salehli, {F. M.} and Seyidov, {Mirhasan Yu} and Suleymanov, {R. A.}",

year = "2005",

month = mar,

day = "30",

doi = "10.1088/0953-8984/17/12/020",

language = "English",

volume = "17",

pages = "1985--1993",

journal = "Journal of Physics Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing Ltd.",

number = "12",

}

TY - JOUR

T1 - The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2 and TIGaSe2

AU - Babaev, S. S.

AU - Başaran, E.

AU - Mammadov, T. G.

AU - Mikailov, F. A.

AU - Salehli, F. M.

AU - Seyidov, Mirhasan Yu

AU - Suleymanov, R. A.

PY - 2005/3/30

Y1 - 2005/3/30

N2 - The temperature dependences of the dielectric constants of the ferroelectric semiconductors TlInS2 and TlGaSe2 have been studied following their annealing within the incommensurate phase. Unusual memory effects accompanied by both a remarkable inflection of the temperature dependence curves in the incommensurate phase and various shifts of the incommensurate (Ti) and commensurate (Tc) phase transition temperatures have been revealed in both crystals. The observed effects are explained on the basis of a defect density wave model taking into account the interaction of modulation waves with charge carriers localized at impurity states. The thermally activated population of these states during the heating or cooling processes is responsible for the changes of the phase transition temperatures.

AB - The temperature dependences of the dielectric constants of the ferroelectric semiconductors TlInS2 and TlGaSe2 have been studied following their annealing within the incommensurate phase. Unusual memory effects accompanied by both a remarkable inflection of the temperature dependence curves in the incommensurate phase and various shifts of the incommensurate (Ti) and commensurate (Tc) phase transition temperatures have been revealed in both crystals. The observed effects are explained on the basis of a defect density wave model taking into account the interaction of modulation waves with charge carriers localized at impurity states. The thermally activated population of these states during the heating or cooling processes is responsible for the changes of the phase transition temperatures.

UR - http://www.scopus.com/inward/record.url?scp=16644378023&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/17/12/020

DO - 10.1088/0953-8984/17/12/020

M3 - Article

AN - SCOPUS:16644378023

SN - 0953-8984

VL - 17

SP - 1985

EP - 1993

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

IS - 12

ER -

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂ and TIGaSe₂

Abstract

Access to Document

Other files and links

Fingerprint

Cite this