The adsorption and decomposition of H2S on Ge(001): An STM study

I. T. McGovern; H. O. Ozer; J. B. Pethica; R. G. Egdell

doi:10.1380/ejssnt.2009.203

The adsorption and decomposition of H₂S on Ge(001): An STM study

I. T. McGovern, H. O. Ozer, J. B. Pethica, R. G. Egdell

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The preparation of a nominal half-monolayer of sulphur on the Ge(001) surface via the adsorption of H₂S and subsequent annealing has been monitored by STM. The 'saturated adsorption' surface image of dark-bright pairs is consistent with the dissociative adsorption of H and HS, respectively, on either atom of each Ge dimer. Images obtained at subsequent annealing stages show significant etching of the germanium surface, which is not detectable by electron spectroscopy. These STM images do not show evidence of the bridge-bonded sulphur that ideally results from this recipe.

Original language	English
Pages (from-to)	203-206
Number of pages	4
Journal	e-Journal of Surface Science and Nanotechnology
Volume	7
DOIs	https://doi.org/10.1380/ejssnt.2009.203
Publication status	Published - 4 Apr 2009
Externally published	Yes

Keywords

Adsorption
Germanium
Hydrogen sulphide
Scanning tunneling microscopy
Surface

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10.1380/ejssnt.2009.203

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abstract = "The preparation of a nominal half-monolayer of sulphur on the Ge(001) surface via the adsorption of H2S and subsequent annealing has been monitored by STM. The 'saturated adsorption' surface image of dark-bright pairs is consistent with the dissociative adsorption of H and HS, respectively, on either atom of each Ge dimer. Images obtained at subsequent annealing stages show significant etching of the germanium surface, which is not detectable by electron spectroscopy. These STM images do not show evidence of the bridge-bonded sulphur that ideally results from this recipe.",

keywords = "Adsorption, Germanium, Hydrogen sulphide, Scanning tunneling microscopy, Surface",

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AU - McGovern, I. T.

AU - Ozer, H. O.

AU - Pethica, J. B.

AU - Egdell, R. G.

PY - 2009/4/4

Y1 - 2009/4/4

N2 - The preparation of a nominal half-monolayer of sulphur on the Ge(001) surface via the adsorption of H2S and subsequent annealing has been monitored by STM. The 'saturated adsorption' surface image of dark-bright pairs is consistent with the dissociative adsorption of H and HS, respectively, on either atom of each Ge dimer. Images obtained at subsequent annealing stages show significant etching of the germanium surface, which is not detectable by electron spectroscopy. These STM images do not show evidence of the bridge-bonded sulphur that ideally results from this recipe.

AB - The preparation of a nominal half-monolayer of sulphur on the Ge(001) surface via the adsorption of H2S and subsequent annealing has been monitored by STM. The 'saturated adsorption' surface image of dark-bright pairs is consistent with the dissociative adsorption of H and HS, respectively, on either atom of each Ge dimer. Images obtained at subsequent annealing stages show significant etching of the germanium surface, which is not detectable by electron spectroscopy. These STM images do not show evidence of the bridge-bonded sulphur that ideally results from this recipe.

KW - Adsorption

KW - Germanium

KW - Hydrogen sulphide

KW - Scanning tunneling microscopy

KW - Surface

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EP - 206

JO - e-Journal of Surface Science and Nanotechnology

JF - e-Journal of Surface Science and Nanotechnology

ER -

The adsorption and decomposition of H₂S on Ge(001): An STM study

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Keywords

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