Textured growth of multi-layered buffer layers on Ni tape by sol-gel process

Y. Akin; Z. Aslanoglu; E. Celik; L. Arda; W. Sigmund; Y. S. Hascicek

doi:10.1109/TASC.2003.811947

Textured growth of multi-layered buffer layers on Ni tape by sol-gel process

Y. Akin^*, Z. Aslanoglu, E. Celik, L. Arda, W. Sigmund, Y. S. Hascicek

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

43 Citations (Scopus)

Abstract

Textured Cerium Oxide (CeO₂)/Yttrium-Stabilized Zirconia (YSZ)/CeO₂ buffer layers structure were grown by sol-gel dip coating process on bi-axially textured Ni tapes for processing of YBCO coated conductors. CeO₂/YSZ/CeO₂ buffer layer structure has been demonstrated by vacuum techniques, but first time textured CeO₂/YSZ/CeO₂ structure were grown by sol-gel on biaxially textured Ni tape. The buffer layer structure promoted c-axis oriented sol-gel YBCO films and prevented oxidation of nickel during YBCO processing. After each layer was coated, the layer was annealed. CeO₂ layers were annealed at 950°C for 30 min. and YSZ layers were annealed at 1150°C for 10 min. under 4% H₂-Ar gas flow. Texture analysis of Ni substrates and bottom CeO₂ were done by Philips diffractometer. Sol-gel YBCO layers were coated on CeO₂/YSZ/CeO₂ structure and critical current density was about 0.5 × 10⁵ A/cm². Microstructure of the buffer layer was investigated by Environmental Scanning Electron Microscope (ESEM).

Original language	English
Pages (from-to)	2673-2676
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	13
Issue number	2 III
DOIs	https://doi.org/10.1109/TASC.2003.811947
Publication status	Published - Jun 2003
Externally published	Yes
Event	2002 Applied Superconductivity Conference - Houston, TX, United States Duration: 4 Aug 2002 → 9 Aug 2002

Keywords

Buffer layers and YBCO
CeO
Sol-gel
YSZ

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10.1109/TASC.2003.811947

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title = "Textured growth of multi-layered buffer layers on Ni tape by sol-gel process",

abstract = "Textured Cerium Oxide (CeO2)/Yttrium-Stabilized Zirconia (YSZ)/CeO2 buffer layers structure were grown by sol-gel dip coating process on bi-axially textured Ni tapes for processing of YBCO coated conductors. CeO2/YSZ/CeO2 buffer layer structure has been demonstrated by vacuum techniques, but first time textured CeO2/YSZ/CeO2 structure were grown by sol-gel on biaxially textured Ni tape. The buffer layer structure promoted c-axis oriented sol-gel YBCO films and prevented oxidation of nickel during YBCO processing. After each layer was coated, the layer was annealed. CeO2 layers were annealed at 950°C for 30 min. and YSZ layers were annealed at 1150°C for 10 min. under 4% H2-Ar gas flow. Texture analysis of Ni substrates and bottom CeO2 were done by Philips diffractometer. Sol-gel YBCO layers were coated on CeO2/YSZ/CeO2 structure and critical current density was about 0.5 × 105 A/cm2. Microstructure of the buffer layer was investigated by Environmental Scanning Electron Microscope (ESEM).",

keywords = "Buffer layers and YBCO, CeO, Sol-gel, YSZ",

author = "Y. Akin and Z. Aslanoglu and E. Celik and L. Arda and W. Sigmund and Hascicek, {Y. S.}",

year = "2003",

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T1 - Textured growth of multi-layered buffer layers on Ni tape by sol-gel process

AU - Akin, Y.

AU - Aslanoglu, Z.

AU - Celik, E.

AU - Arda, L.

AU - Sigmund, W.

AU - Hascicek, Y. S.

PY - 2003/6

Y1 - 2003/6

N2 - Textured Cerium Oxide (CeO2)/Yttrium-Stabilized Zirconia (YSZ)/CeO2 buffer layers structure were grown by sol-gel dip coating process on bi-axially textured Ni tapes for processing of YBCO coated conductors. CeO2/YSZ/CeO2 buffer layer structure has been demonstrated by vacuum techniques, but first time textured CeO2/YSZ/CeO2 structure were grown by sol-gel on biaxially textured Ni tape. The buffer layer structure promoted c-axis oriented sol-gel YBCO films and prevented oxidation of nickel during YBCO processing. After each layer was coated, the layer was annealed. CeO2 layers were annealed at 950°C for 30 min. and YSZ layers were annealed at 1150°C for 10 min. under 4% H2-Ar gas flow. Texture analysis of Ni substrates and bottom CeO2 were done by Philips diffractometer. Sol-gel YBCO layers were coated on CeO2/YSZ/CeO2 structure and critical current density was about 0.5 × 105 A/cm2. Microstructure of the buffer layer was investigated by Environmental Scanning Electron Microscope (ESEM).

AB - Textured Cerium Oxide (CeO2)/Yttrium-Stabilized Zirconia (YSZ)/CeO2 buffer layers structure were grown by sol-gel dip coating process on bi-axially textured Ni tapes for processing of YBCO coated conductors. CeO2/YSZ/CeO2 buffer layer structure has been demonstrated by vacuum techniques, but first time textured CeO2/YSZ/CeO2 structure were grown by sol-gel on biaxially textured Ni tape. The buffer layer structure promoted c-axis oriented sol-gel YBCO films and prevented oxidation of nickel during YBCO processing. After each layer was coated, the layer was annealed. CeO2 layers were annealed at 950°C for 30 min. and YSZ layers were annealed at 1150°C for 10 min. under 4% H2-Ar gas flow. Texture analysis of Ni substrates and bottom CeO2 were done by Philips diffractometer. Sol-gel YBCO layers were coated on CeO2/YSZ/CeO2 structure and critical current density was about 0.5 × 105 A/cm2. Microstructure of the buffer layer was investigated by Environmental Scanning Electron Microscope (ESEM).

KW - Buffer layers and YBCO

KW - CeO

KW - Sol-gel

KW - YSZ

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JF - IEEE Transactions on Applied Superconductivity

IS - 2 III

T2 - 2002 Applied Superconductivity Conference

Y2 - 4 August 2002 through 9 August 2002

ER -

Textured growth of multi-layered buffer layers on Ni tape by sol-gel process

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