Abstract
GaN FETs offer higher switching speeds and lower gate drive losses compared to IGBTs. Their low parasitic capacitance allows for achieving higher switching frequencies. Due to the limited Vds voltage of GaN FETs, they must be connected in series for high-voltage power conversion applications, necessitating voltage balancing. This study proposes a gate driving scheme and circuitry to control an 800V / 16A hybrid switch using a single gate driver while balancing voltage across the series-connected GaN FETs. As a result of using the hybrid configuration, conduction loss on GaN FETs has been reduced by 70.7%, and the cost of the switching unit has decreased significantly, making it an alternative low-switching loss and high power switching unit.
| Translated title of the contribution | 1200V Series-Connected GAN-IGBT Hybrid Switch with Single Gate Driver |
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| Original language | Turkish |
| Title of host publication | Electrical-Electronics and Biomedical Engineering Conference, ELECO 2024 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9798331518035 |
| DOIs | |
| Publication status | Published - 2024 |
| Event | 2024 Electrical, Electronics and Biomedical Engineering Conference at 15th National Conference on Electrical and Electronics Engineering, ELECO 2024 - Bursa, Turkey Duration: 28 Nov 2024 → 30 Nov 2024 |
Publication series
| Name | Electrical-Electronics and Biomedical Engineering Conference, ELECO 2024 - Proceedings |
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Conference
| Conference | 2024 Electrical, Electronics and Biomedical Engineering Conference at 15th National Conference on Electrical and Electronics Engineering, ELECO 2024 |
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| Country/Territory | Turkey |
| City | Bursa |
| Period | 28/11/24 → 30/11/24 |
Bibliographical note
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