Synthesis of Si nanowires by electroless etching technique and their integration into I-III-VI 2 thin films for solar cells

H. Karaagac; M. Parlak; M. Saif Islam

doi:10.1557/opl.2012.40

Synthesis of Si nanowires by electroless etching technique and their integration into I-III-VI ₂ thin films for solar cells

H. Karaagac^*
, M. Parlak
, M. Saif Islam

^*Corresponding author for this work

University of California at Davis
Middle East Technical University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO ₃ aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa _0.5In _0.5Se ₂ thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.

Original language	English
Title of host publication	Functional Nanowires and Nanotubes
Pages	49-54
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.40
Publication status	Published - 2012
Externally published	Yes
Event	2011 MRS Fall Meeting - Boston, MA, United States Duration: 28 Nov 2011 → 2 Dec 2011

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1408
ISSN (Print)	0272-9172

Conference

Conference	2011 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	28/11/11 → 2/12/11

Funding

This work was supported by Turkish Scientific and Research Council (TUBITAK) under BIDEB-2219 program.

Funders	Funder number
TUBITAK	BIDEB-2219
Turkish Scientific and Research Council

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1557/opl.2012.40

Cite this

@inproceedings{13bff4e9fe2b47c7a0188738367d8b83,

title = "Synthesis of Si nanowires by electroless etching technique and their integration into I-III-VI 2 thin films for solar cells",

abstract = "Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO 3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa 0.5In 0.5Se 2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50\% power conversion efficiency under AM (1.5) illumination.",

author = "H. Karaagac and M. Parlak and \{Saif Islam\}, M.",

year = "2012",

doi = "10.1557/opl.2012.40",

language = "English",

isbn = "9781605113852",

series = "Materials Research Society Symposium Proceedings",

pages = "49--54",

booktitle = "Functional Nanowires and Nanotubes",

note = "2011 MRS Fall Meeting ; Conference date: 28-11-2011 Through 02-12-2011",

}

Karaagac, H, Parlak, M & Saif Islam, M 2012, Synthesis of Si nanowires by electroless etching technique and their integration into I-III-VI ₂ thin films for solar cells. in Functional Nanowires and Nanotubes. Materials Research Society Symposium Proceedings, vol. 1408, pp. 49-54, 2011 MRS Fall Meeting, Boston, MA, United States, 28/11/11. https://doi.org/10.1557/opl.2012.40

Synthesis of Si nanowires by electroless etching technique and their integration into I-III-VI ₂ thin films for solar cells. / Karaagac, H.; Parlak, M.; Saif Islam, M.
Functional Nanowires and Nanotubes. 2012. p. 49-54 (Materials Research Society Symposium Proceedings; Vol. 1408).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Synthesis of Si nanowires by electroless etching technique and their integration into I-III-VI 2 thin films for solar cells

AU - Karaagac, H.

AU - Parlak, M.

AU - Saif Islam, M.

PY - 2012

Y1 - 2012

N2 - Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO 3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa 0.5In 0.5Se 2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.

AB - Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO 3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa 0.5In 0.5Se 2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.

UR - https://www.scopus.com/pages/publications/84864985720

U2 - 10.1557/opl.2012.40

DO - 10.1557/opl.2012.40

M3 - Conference contribution

AN - SCOPUS:84864985720

SN - 9781605113852

T3 - Materials Research Society Symposium Proceedings

SP - 49

EP - 54

BT - Functional Nanowires and Nanotubes

T2 - 2011 MRS Fall Meeting

Y2 - 28 November 2011 through 2 December 2011

ER -