Synthesis of Si nanowires by electroless etching technique and their integration into I-III-VI 2 thin films for solar cells

H. Karaagac*, M. Parlak, M. Saif Islam

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO 3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa 0.5In 0.5Se 2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.

Original languageEnglish
Title of host publicationFunctional Nanowires and Nanotubes
Pages49-54
Number of pages6
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: 28 Nov 20112 Dec 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1408
ISSN (Print)0272-9172

Conference

Conference2011 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period28/11/112/12/11

Funding

This work was supported by Turkish Scientific and Research Council (TUBITAK) under BIDEB-2219 program.

FundersFunder number
TUBITAKBIDEB-2219
Turkish Scientific and Research Council

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