@inproceedings{13bff4e9fe2b47c7a0188738367d8b83,
title = "Synthesis of Si nanowires by electroless etching technique and their integration into I-III-VI 2 thin films for solar cells",
abstract = "Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO 3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa 0.5In 0.5Se 2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.",
author = "H. Karaagac and M. Parlak and {Saif Islam}, M.",
year = "2012",
doi = "10.1557/opl.2012.40",
language = "English",
isbn = "9781605113852",
series = "Materials Research Society Symposium Proceedings",
pages = "49--54",
booktitle = "Functional Nanowires and Nanotubes",
note = "2011 MRS Fall Meeting ; Conference date: 28-11-2011 Through 02-12-2011",
}