Abstract
In the present study, a method based on sulfuric acid dehydration of sugar was developed to synthesize a precursor material, which can yield B 4C/SiC composites at much lower temperatures compared to traditional carbothermal methods. The precursor material for pure B4C was heat treated at the temperatures between 400 and 1600°C under inert atmosphere. The precursor material for B4C /SiC composites was heat treated only at 1600°C under an inert atmosphere. Then the samples were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The results showed that B-C bonds formed as low as 400°C. On the other hand, crystallized B4C and B4C / SiC composites can be obtained at the heat treatment temperatures between 1400 and 1600°C.
Original language | English |
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Pages (from-to) | 268-272 |
Number of pages | 5 |
Journal | Defect and Diffusion Forum |
Volume | 283-286 |
DOIs | |
Publication status | Published - 2008 |
Keywords
- Boron carbide
- Ceramic precursor
- Ceramic synthesis
- Low temperature synthesis
- Silicon carbide