TY - GEN
T1 - Synthesis of B4C from sugar based precursor
AU - Avciata, Oǧuzhan
AU - Ergun, Celaletdin
AU - Erden, Ibrahim
AU - Üstündaǧ, Cem
AU - Yilmaz, Şafak
AU - Cihangir, Selçuk
PY - 2008
Y1 - 2008
N2 - Boron carbide (B4C) is one of the hardest materials and therefore commonly used for a variety of applications including armor plating, blasting nozzles and mechanical seal faces, as well as for grinding and cutting tools. Conventional production methods of B4C, such as carbothermal reduction in industrial scale requires high investment and high operating costs, inhomogeneous resultant material, etc. In the present study, a method based on sulfuric acid dehydration of sugar was developed to synthesis a precursor material, which can yield B4C at much lower temperatures compared to traditional carbothermal methods. The precursor material was heat treated at the temperatures between 400 and 1600°C under inert atmosphere and characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The results showed that B-C bonds formed as low as 400°C. On the other hand, crystallized boron carbide (B4C) obtained at the temperatures between 1400 and 1600°C.
AB - Boron carbide (B4C) is one of the hardest materials and therefore commonly used for a variety of applications including armor plating, blasting nozzles and mechanical seal faces, as well as for grinding and cutting tools. Conventional production methods of B4C, such as carbothermal reduction in industrial scale requires high investment and high operating costs, inhomogeneous resultant material, etc. In the present study, a method based on sulfuric acid dehydration of sugar was developed to synthesis a precursor material, which can yield B4C at much lower temperatures compared to traditional carbothermal methods. The precursor material was heat treated at the temperatures between 400 and 1600°C under inert atmosphere and characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The results showed that B-C bonds formed as low as 400°C. On the other hand, crystallized boron carbide (B4C) obtained at the temperatures between 1400 and 1600°C.
KW - Boron carbide
KW - Ceramic precursor
KW - Ceramic synthesis
KW - Low temperature synthesis
UR - http://www.scopus.com/inward/record.url?scp=84872161744&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84872161744
SN - 9788880800842
T3 - A Global Road Map for Ceramic Materials and Technologies: Forecasting the Future of Ceramics, International Ceramic Federation - 2nd International Congress on Ceramics, ICC 2008, Final Programme
BT - A Global Road Map for Ceramic Materials and Technologies
T2 - 2nd International Congress on Ceramics, ICC 2008
Y2 - 29 June 2008 through 4 July 2008
ER -