Abstract
We employed solid state reaction technique to synthesize ZnGa 2O4 particles, produced in steps of mixing/milling the ingredients in H2O following thermal treating under 1200 °C. We compare spinel and partially inverse spinel structure in ZnGa2O 4 particles using Rietveld refinement. Crystal structure of ZnGa 2O4 particles was identified with two structural phases; normal spinel structure and partially inverse spinel structure using Rietveld refinement. It is found that the partially inverse spinel structures occupy nearly 13% and the rest is normal spinel structure. The obtained X-ray diffraction data show that lattice constant and the position of Oxygen atoms remain almost constant in both structures. The characterization of the particles was also improved using X-ray photoelectron spectroscopy and Fourier transforms infrared spectroscopy measurements. The optical analyses were done with UV-visible spectroscopy. The band gap, calculated from climate point of UV-visible data, was found as 4.6 ± 0.1 eV. Despite no unexpected compound (such as ZnO and Ga2O3) in the structure, the optical analyses were shown defective ZnO structure in ZnGa2O 4.
| Original language | English |
|---|---|
| Pages (from-to) | 303-307 |
| Number of pages | 5 |
| Journal | Journal of Alloys and Compounds |
| Volume | 549 |
| DOIs | |
| Publication status | Published - 5 Feb 2013 |
Keywords
- Spinel oxides
- Structural parameters
- Wide band gap oxide semiconductors
- Zinc gallate