TY - JOUR
T1 - Synthesis and characterization of BaIrO3-doped YBCO superconducting thin films via TFA-MOD technique
AU - Bektas, Murat
AU - Birlik, Isil
AU - Celik, Erdal
N1 - Publisher Copyright:
© The Author(s) 2024.
PY - 2024/5
Y1 - 2024/5
N2 - High-temperature superconducting materials (HTS) are characterized by remarkably high critical current density (Jc) values when exposed to low temperatures and magnetic fields. In the realm of such investigations, various crystalline imperfections, including finely dispersed non-superconducting phases, dislocations, vacancies, grain boundaries, twin boundaries, antiphase boundaries, and insulating regions within grain boundaries, have been recognized as potential sources of pinning centers. However, it is essential to acknowledge that Jc values experience a rapid decline as the temperature rises in the presence of a magnetic field. The primary contributing factors to this decline are attributed to the intrinsic crystalline anisotropy of HTS materials and the thermal fluctuations that prevail at elevated temperatures. Nevertheless, a noteworthy factor in the diminishment of Jc values is the scarcity of efficacious pinning centers. In response to these challenges, a pioneering technology has emerged, revolving around nanostructure engineering for the deliberate creation of artificial pinning centers within HTS materials. In alignment with this approach, the present study endeavors to augment the critical current density and enhance the flux pinning properties of YBa2Cu3O6.56 (YBCO) superconducting films. This augmentation is achieved through the integration of BaIrO3 (BIO) perovskite nanodots, nanorods, or nanoparticles as strategically positioned pinning centers. The films are deposited on a SrTiO3 (STO) substrate employing the Trifluoroacetate Metal–Organic Deposition (TFA-MOD) technique. This research initiative seeks to contribute to the advancement of knowledge regarding the controlled manipulation of artificial pinning centers in HTS materials, particularly focusing on YBCO thin films, with the ultimate goal of enhancing their performance under the influence of elevated magnetic fields.
AB - High-temperature superconducting materials (HTS) are characterized by remarkably high critical current density (Jc) values when exposed to low temperatures and magnetic fields. In the realm of such investigations, various crystalline imperfections, including finely dispersed non-superconducting phases, dislocations, vacancies, grain boundaries, twin boundaries, antiphase boundaries, and insulating regions within grain boundaries, have been recognized as potential sources of pinning centers. However, it is essential to acknowledge that Jc values experience a rapid decline as the temperature rises in the presence of a magnetic field. The primary contributing factors to this decline are attributed to the intrinsic crystalline anisotropy of HTS materials and the thermal fluctuations that prevail at elevated temperatures. Nevertheless, a noteworthy factor in the diminishment of Jc values is the scarcity of efficacious pinning centers. In response to these challenges, a pioneering technology has emerged, revolving around nanostructure engineering for the deliberate creation of artificial pinning centers within HTS materials. In alignment with this approach, the present study endeavors to augment the critical current density and enhance the flux pinning properties of YBa2Cu3O6.56 (YBCO) superconducting films. This augmentation is achieved through the integration of BaIrO3 (BIO) perovskite nanodots, nanorods, or nanoparticles as strategically positioned pinning centers. The films are deposited on a SrTiO3 (STO) substrate employing the Trifluoroacetate Metal–Organic Deposition (TFA-MOD) technique. This research initiative seeks to contribute to the advancement of knowledge regarding the controlled manipulation of artificial pinning centers in HTS materials, particularly focusing on YBCO thin films, with the ultimate goal of enhancing their performance under the influence of elevated magnetic fields.
UR - http://www.scopus.com/inward/record.url?scp=85194075971&partnerID=8YFLogxK
U2 - 10.1007/s10854-024-12607-3
DO - 10.1007/s10854-024-12607-3
M3 - Article
AN - SCOPUS:85194075971
SN - 0957-4522
VL - 35
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 15
M1 - 996
ER -