Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

N. H. Erdogan, K. Kara, H. Ozdamar, H. Kavak*, R. Esen, H. Karaagac

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

In this study, N-doped ZnO thin films were fabricated by oxidation of ZnxNy films. The ZnxNy thin films were deposited on glass substrates by pulsed filtered cathodic vacuum arc deposition (PFCVAD) using metallic zinc wire (99.999%) as a cathode target in pure nitrogen plasma. The influence of oxidation temperature, on the electrical, structural and optical properties of N-doped ZnO films was investigated. P-type conduction was achieved for the N-doped ZnO obtained at 450 °C by oxidation of ZnxNy, with a resistivity of 16.1 Ω cm, hole concentration of 2.03 × 1016 cm-3 and Hall mobility of 19 cm2/V s. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N into the ZnO films. X-ray diffraction (XRD) pattern showed that the films as-deposited and oxidized at 350 °C were amorphous. However, the oxidized films in air atmosphere at 450-550 °C were polycrystalline without preferential orientation. In room temperature photoluminescence (PL) spectra, an ultraviolet (UV) peak was seen for all the samples. In addition, a broad deep level emission was observed.

Original languageEnglish
Pages (from-to)8922-8926
Number of pages5
JournalJournal of Alloys and Compounds
Volume509
Issue number36
DOIs
Publication statusPublished - 8 Sept 2011
Externally publishedYes

Keywords

  • Crystal structure
  • Oxidation
  • Semiconductors
  • Thin films
  • X-ray diffraction

Fingerprint

Dive into the research topics of 'Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films'. Together they form a unique fingerprint.

Cite this