Structural, electrical transport and NO 2 sensing properties of Y-doped ZnO thin films

Necmettin Kilinç; Sadullah Öztürk; Lütfi Arda; Ahmet Altindal; Zafer Ziya Öztürk

doi:10.1016/j.jallcom.2012.04.104

Structural, electrical transport and NO ₂ sensing properties of Y-doped ZnO thin films

Necmettin Kilinç^*, Sadullah Öztürk, Lütfi Arda, Ahmet Altindal, Zafer Ziya Öztürk

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Abstract

Yttrium (Y) doped ZnO thin films with concentrations of 1 at.%, 5 at.% and 10 at.% Y concentrations were deposited on glass substrates by using sol-gel dip coating method. The electrical properties of the films were measured dependence on temperature to identify the dominant conduction mechanism. It was found that thermally activated band conduction was the dominant conduction mechanism at high temperatures whereas, in the low temperature region, the dependence of the dc conductivity on temperature followed Mott's variable range hopping (VRH) model. The temperature dependence of both the ac conductivity and the frequency exponent are reasonably well interpreted by the correlated barrier hopping (CBH) model. The imaginary part of the impedance at different temperatures shows a relaxation peak and its position shifts to higher frequency with increasing temperature. This suggests a temperature-dependent relaxation. As an application, the NO ₂ sensing properties of the films were investigated at 200 °C in the concentration ranges of 100 ppb-1 ppm. The response characteristics of Y-doped ZnO films have shown a high sensitivity to NO ₂ at this temperature and the highest sensor response were observed for 1 at.% Y-doped ZnO film.

Original language	English
Pages (from-to)	138-144
Number of pages	7
Journal	Journal of Alloys and Compounds
Volume	536
DOIs	https://doi.org/10.1016/j.jallcom.2012.04.104
Publication status	Published - 25 Sept 2012
Externally published	Yes

Funding

This study was partially supported by TUBITAK project entitled “Development of Automotive Gas Sensors Based on Nano-Metal-Oxide Semiconductor with increased Selectivity, Sensitivity and Stability” (Project No. 111M261) and by DPT project entitled “Nanomagnetism and Spintronics Research Center” (Project No. 2009K120730).

Funders	Funder number
DPT
Spintronics Research Center	2009K120730
TUBITAK	111M261

Keywords

CBH
Conduction mechanism
Dip coating
NO sensing
VRH
Yttrium doped ZnO

Access to Document

10.1016/j.jallcom.2012.04.104

Cite this

@article{00153aa825934f0e8a52e4a98236158a,

title = "Structural, electrical transport and NO 2 sensing properties of Y-doped ZnO thin films",

abstract = "Yttrium (Y) doped ZnO thin films with concentrations of 1 at.\%, 5 at.\% and 10 at.\% Y concentrations were deposited on glass substrates by using sol-gel dip coating method. The electrical properties of the films were measured dependence on temperature to identify the dominant conduction mechanism. It was found that thermally activated band conduction was the dominant conduction mechanism at high temperatures whereas, in the low temperature region, the dependence of the dc conductivity on temperature followed Mott's variable range hopping (VRH) model. The temperature dependence of both the ac conductivity and the frequency exponent are reasonably well interpreted by the correlated barrier hopping (CBH) model. The imaginary part of the impedance at different temperatures shows a relaxation peak and its position shifts to higher frequency with increasing temperature. This suggests a temperature-dependent relaxation. As an application, the NO 2 sensing properties of the films were investigated at 200 °C in the concentration ranges of 100 ppb-1 ppm. The response characteristics of Y-doped ZnO films have shown a high sensitivity to NO 2 at this temperature and the highest sensor response were observed for 1 at.\% Y-doped ZnO film.",

keywords = "CBH, Conduction mechanism, Dip coating, NO sensing, VRH, Yttrium doped ZnO",

author = "Necmettin Kilin{\c c} and Sadullah {\"O}zt{\"u}rk and L{\"u}tfi Arda and Ahmet Altindal and {\"O}zt{\"u}rk, \{Zafer Ziya\}",

year = "2012",

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day = "25",

doi = "10.1016/j.jallcom.2012.04.104",

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T1 - Structural, electrical transport and NO 2 sensing properties of Y-doped ZnO thin films

AU - Kilinç, Necmettin

AU - Öztürk, Sadullah

AU - Arda, Lütfi

AU - Altindal, Ahmet

AU - Öztürk, Zafer Ziya

PY - 2012/9/25

Y1 - 2012/9/25

N2 - Yttrium (Y) doped ZnO thin films with concentrations of 1 at.%, 5 at.% and 10 at.% Y concentrations were deposited on glass substrates by using sol-gel dip coating method. The electrical properties of the films were measured dependence on temperature to identify the dominant conduction mechanism. It was found that thermally activated band conduction was the dominant conduction mechanism at high temperatures whereas, in the low temperature region, the dependence of the dc conductivity on temperature followed Mott's variable range hopping (VRH) model. The temperature dependence of both the ac conductivity and the frequency exponent are reasonably well interpreted by the correlated barrier hopping (CBH) model. The imaginary part of the impedance at different temperatures shows a relaxation peak and its position shifts to higher frequency with increasing temperature. This suggests a temperature-dependent relaxation. As an application, the NO 2 sensing properties of the films were investigated at 200 °C in the concentration ranges of 100 ppb-1 ppm. The response characteristics of Y-doped ZnO films have shown a high sensitivity to NO 2 at this temperature and the highest sensor response were observed for 1 at.% Y-doped ZnO film.

AB - Yttrium (Y) doped ZnO thin films with concentrations of 1 at.%, 5 at.% and 10 at.% Y concentrations were deposited on glass substrates by using sol-gel dip coating method. The electrical properties of the films were measured dependence on temperature to identify the dominant conduction mechanism. It was found that thermally activated band conduction was the dominant conduction mechanism at high temperatures whereas, in the low temperature region, the dependence of the dc conductivity on temperature followed Mott's variable range hopping (VRH) model. The temperature dependence of both the ac conductivity and the frequency exponent are reasonably well interpreted by the correlated barrier hopping (CBH) model. The imaginary part of the impedance at different temperatures shows a relaxation peak and its position shifts to higher frequency with increasing temperature. This suggests a temperature-dependent relaxation. As an application, the NO 2 sensing properties of the films were investigated at 200 °C in the concentration ranges of 100 ppb-1 ppm. The response characteristics of Y-doped ZnO films have shown a high sensitivity to NO 2 at this temperature and the highest sensor response were observed for 1 at.% Y-doped ZnO film.

KW - CBH

KW - Conduction mechanism

KW - Dip coating

KW - NO sensing

KW - VRH

KW - Yttrium doped ZnO

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DO - 10.1016/j.jallcom.2012.04.104

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