Stress-induced changes in phonon frequencies of ZrSiO4: Infrared spectroscopy-based pressure sensor

Mubashir Mansoor, Mehya Mansoor, Maryam Mansoor, Zuhal Er, Kamil Czelej*, Mustafa Ürgen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Functional materials that can serve as high-pressure transducers are limited, making such sensor material sought after. It has been reported that hydrostatic pressures highly influence Raman shifts of ZrSiO4. Therefore, zirconium silicate has been suggested as a Raman spectroscopic pressure sensor. However, mass applications of a Raman-based sensor technology poses a wide range of challenges. We demonstrate that ZrSiO4 also exhibits pressure-dependent infrared (IR) spectra. Furthermore, the IR peaks of ZrSiO4 are sensitive to shear stresses and non-hydrostatic pressures, making this material a unique sensor for determining a variety of mechanical stresses through IR spectroscopy.

Original languageEnglish
Article number114983
JournalSolid State Communications
Volume357
DOIs
Publication statusPublished - 1 Dec 2022

Bibliographical note

Publisher Copyright:
© 2022 Elsevier Ltd

Keywords

  • Ab-initio
  • IR Spectroscopy
  • Pressure transducer
  • Raman spectroscopy
  • Zircon

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