Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Aykut Kabaoglu; Nergiz Sahin Solmaz; Sadik Ilik; Yasemin Uzun; Mustafa Berke Yelten

doi:10.1109/TED.2018.2877942

Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Aykut Kabaoglu^*, Nergiz Sahin Solmaz, Sadik Ilik, Yasemin Uzun, Mustafa Berke Yelten

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate I_D-V_GS and I_D-V_DS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.

Original language	English
Article number	8550668
Pages (from-to)	66-72
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2877942
Publication status	Published - Jan 2019

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Funding

Manuscript received July 30, 2018; revised October 6, 2018; accepted October 17, 2018. Date of publication November 28, 2018; date of current version December 24, 2018. This work was supported by the Technological Research Council of Turkey under the project TÜBİTAK 1001 215E080. The review of this paper was arranged by Editor S. Yoshitomi. (Corresponding author: Aykut Kabaog˘lu.) The authors are with the VLSI Laboratory, Department of Electronics and Communication Engineering, Istanbul Technical University, 34469 Istanbul, Turkey (e-mail: [email protected]; sahinn@ itu.edu.tr; [email protected]; [email protected]; [email protected]).

Funders	Funder number
Technological Research Council of Turkey	1001 215E080

Keywords

BSIM modeling
cryogenic
cryogenic variation
device modeling
low temperature
MOSFET modeling
statistical modeling

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10.1109/TED.2018.2877942

Cite this

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abstract = "Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate ID-VGS and ID-VDS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.",

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Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Abstract

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Keywords

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