Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

L. Trabzon; O. O. Awadelkarim; J. Werking; G. Bersuker; Y. D. Chan

doi:10.1109/55.545773

Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

L. Trabzon^*, O. O. Awadelkarim, J. Werking, G. Bersuker, Y. D. Chan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Sinusoidal ac signals are applied to 90-Å thick gateoxide in 0.5-μm n-MOSFET's. The objective is to emulate ac stressing to devices, recently reported to occur during plasma processes. AC stressing is found to be more damaging to the oxide and oxide/silicon interface when compared to de stressing. The damage induced by the ac stress is observed to depend on the signals frequency and amplitude. It is proposed that carrier hopping is primarily responsible for oxide current and device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress. when Fowler-Nordheim tunneling becomes the dominant conduction mechanism.

Original language	English
Pages (from-to)	569-571
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	12
DOIs	https://doi.org/10.1109/55.545773
Publication status	Published - Dec 1996
Externally published	Yes

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title = "Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's",

abstract = "Sinusoidal ac signals are applied to 90-{\AA} thick gateoxide in 0.5-μm n-MOSFET's. The objective is to emulate ac stressing to devices, recently reported to occur during plasma processes. AC stressing is found to be more damaging to the oxide and oxide/silicon interface when compared to de stressing. The damage induced by the ac stress is observed to depend on the signals frequency and amplitude. It is proposed that carrier hopping is primarily responsible for oxide current and device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress. when Fowler-Nordheim tunneling becomes the dominant conduction mechanism.",

author = "L. Trabzon and Awadelkarim, {O. O.} and J. Werking and G. Bersuker and Chan, {Y. D.}",

year = "1996",

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T1 - Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

AU - Trabzon, L.

AU - Awadelkarim, O. O.

AU - Werking, J.

AU - Bersuker, G.

AU - Chan, Y. D.

PY - 1996/12

Y1 - 1996/12

N2 - Sinusoidal ac signals are applied to 90-Å thick gateoxide in 0.5-μm n-MOSFET's. The objective is to emulate ac stressing to devices, recently reported to occur during plasma processes. AC stressing is found to be more damaging to the oxide and oxide/silicon interface when compared to de stressing. The damage induced by the ac stress is observed to depend on the signals frequency and amplitude. It is proposed that carrier hopping is primarily responsible for oxide current and device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress. when Fowler-Nordheim tunneling becomes the dominant conduction mechanism.

AB - Sinusoidal ac signals are applied to 90-Å thick gateoxide in 0.5-μm n-MOSFET's. The objective is to emulate ac stressing to devices, recently reported to occur during plasma processes. AC stressing is found to be more damaging to the oxide and oxide/silicon interface when compared to de stressing. The damage induced by the ac stress is observed to depend on the signals frequency and amplitude. It is proposed that carrier hopping is primarily responsible for oxide current and device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress. when Fowler-Nordheim tunneling becomes the dominant conduction mechanism.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

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