Abstract
GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models.
| Original language | English |
|---|---|
| Title of host publication | PCIM Europe 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
| Publisher | Mesago PCIM GmbH |
| Pages | 145-152 |
| Number of pages | 8 |
| ISBN (Electronic) | 9783800755158 |
| Publication status | Published - 2021 |
| Event | 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 - Virtual, Online Duration: 3 May 2021 → 7 May 2021 |
Publication series
| Name | PCIM Europe Conference Proceedings |
|---|---|
| Volume | 2021-May |
| ISSN (Electronic) | 2191-3358 |
Conference
| Conference | 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 |
|---|---|
| City | Virtual, Online |
| Period | 3/05/21 → 7/05/21 |
Bibliographical note
Publisher Copyright:© VDE VERLAG GMBH · Berlin · Offenbach.