Abstract
GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models.
| Original language | English |
|---|---|
| Title of host publication | PCIM Europe 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
| Publisher | Mesago PCIM GmbH |
| Pages | 145-152 |
| Number of pages | 8 |
| ISBN (Electronic) | 9783800755158 |
| Publication status | Published - 2021 |
| Event | 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 - Virtual, Online Duration: 3 May 2021 → 7 May 2021 |
Publication series
| Name | PCIM Europe Conference Proceedings |
|---|---|
| Volume | 2021-May |
| ISSN (Electronic) | 2191-3358 |
Conference
| Conference | 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 |
|---|---|
| City | Virtual, Online |
| Period | 3/05/21 → 7/05/21 |
Bibliographical note
Publisher Copyright:© VDE VERLAG GMBH · Berlin · Offenbach.
Funding
This paper has been produced benefiting from the 2232 International Fellowship for Outstanding Researchers Program of TÜBİTAK (Project No: 118C374). However, the entire responsibility of the paper belongs to the owner of the paper. The financial support received from TÜBİTAK does not mean that the content of the publication is approved in a scientific sense by TÜBİTAK.
| Funders | Funder number |
|---|---|
| TÜBİTAK | 118C374 |