SiGe HBT Low Noise Amplifier Module for sub-six 5G Receivers

Alperen Tunc; Osman Ceylan; H. Bulent Yagci; Selcuk Paker

doi:10.1109/TELFOR48224.2019.8971175

SiGe HBT Low Noise Amplifier Module for sub-six 5G Receivers

Alperen Tunc, Osman Ceylan, H. Bulent Yagci, Selcuk Paker

Department of Electronics and Communication Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

This study presents a low noise and wideband amplifier design and implementation for sub-six 5G receivers. The proposed LNA consists of discrete components, including an ultra-low noise SiGe HBT. The final circuit is connectorized and prepared as a module amplifier. The realized LNA reveals a minimum linear gain of 13 dB, maximum noise Figure of 2.5 dB, and minimum output power of 0dBm at 1 dB compression point between 700 MHz and 5.8 GHz bands.

Original language	English
Title of host publication	27th Telecommunications Forum, TELFOR 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728147895
DOIs	https://doi.org/10.1109/TELFOR48224.2019.8971175
Publication status	Published - Nov 2019
Event	27th Telecommunications Forum, TELFOR 2019 - Belgrade, Serbia Duration: 26 Nov 2019 → 27 Nov 2019

Publication series

Name	27th Telecommunications Forum, TELFOR 2019

Conference

Conference	27th Telecommunications Forum, TELFOR 2019
Country/Territory	Serbia
City	Belgrade
Period	26/11/19 → 27/11/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Keywords

5G
HBT
LNA
SiGe
wideband

Access to Document

10.1109/TELFOR48224.2019.8971175

Cite this

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title = "SiGe HBT Low Noise Amplifier Module for sub-six 5G Receivers",

abstract = "This study presents a low noise and wideband amplifier design and implementation for sub-six 5G receivers. The proposed LNA consists of discrete components, including an ultra-low noise SiGe HBT. The final circuit is connectorized and prepared as a module amplifier. The realized LNA reveals a minimum linear gain of 13 dB, maximum noise Figure of 2.5 dB, and minimum output power of 0dBm at 1 dB compression point between 700 MHz and 5.8 GHz bands.",

keywords = "5G, HBT, LNA, SiGe, wideband",

author = "Alperen Tunc and Osman Ceylan and Yagci, {H. Bulent} and Selcuk Paker",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 27th Telecommunications Forum, TELFOR 2019 ; Conference date: 26-11-2019 Through 27-11-2019",

year = "2019",

month = nov,

doi = "10.1109/TELFOR48224.2019.8971175",

language = "English",

series = "27th Telecommunications Forum, TELFOR 2019",

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Tunc, A, Ceylan, O, Yagci, HB & Paker, S 2019, SiGe HBT Low Noise Amplifier Module for sub-six 5G Receivers. in 27th Telecommunications Forum, TELFOR 2019., 8971175, 27th Telecommunications Forum, TELFOR 2019, Institute of Electrical and Electronics Engineers Inc., 27th Telecommunications Forum, TELFOR 2019, Belgrade, Serbia, 26/11/19. https://doi.org/10.1109/TELFOR48224.2019.8971175

SiGe HBT Low Noise Amplifier Module for sub-six 5G Receivers. / Tunc, Alperen; Ceylan, Osman; Yagci, H. Bulent et al.
27th Telecommunications Forum, TELFOR 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8971175 (27th Telecommunications Forum, TELFOR 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yagci, H. Bulent

AU - Paker, Selcuk

PY - 2019/11

Y1 - 2019/11

N2 - This study presents a low noise and wideband amplifier design and implementation for sub-six 5G receivers. The proposed LNA consists of discrete components, including an ultra-low noise SiGe HBT. The final circuit is connectorized and prepared as a module amplifier. The realized LNA reveals a minimum linear gain of 13 dB, maximum noise Figure of 2.5 dB, and minimum output power of 0dBm at 1 dB compression point between 700 MHz and 5.8 GHz bands.

AB - This study presents a low noise and wideband amplifier design and implementation for sub-six 5G receivers. The proposed LNA consists of discrete components, including an ultra-low noise SiGe HBT. The final circuit is connectorized and prepared as a module amplifier. The realized LNA reveals a minimum linear gain of 13 dB, maximum noise Figure of 2.5 dB, and minimum output power of 0dBm at 1 dB compression point between 700 MHz and 5.8 GHz bands.

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KW - HBT

KW - LNA

KW - SiGe

KW - wideband

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U2 - 10.1109/TELFOR48224.2019.8971175

DO - 10.1109/TELFOR48224.2019.8971175

M3 - Conference contribution

AN - SCOPUS:85079326959

T3 - 27th Telecommunications Forum, TELFOR 2019

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 27th Telecommunications Forum, TELFOR 2019

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ER -

SiGe HBT Low Noise Amplifier Module for sub-six 5G Receivers

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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