Abstract
In this work, we investigated the sensing challenges of spin-transfer torque MRAMs structured with perpendicular magnetic tunnel junctions with a high tunneling magnetoresistance ratio in a low resistance-area product. To overcome the problems of reading this type of memory, we have proposed a voltage sensing amplifier topology and compared its performance to that of the current sensing amplifier in terms of power, speed, and bit error rate performance. We have verified that the proposed sensing scheme offers a substantial improvement in bit-error-rate performance. To enumerate the read operations of the proposed sensing scheme with the proposed cross-coupled capacitive feedback technique on the clamped circuity have successfully been performed a 2.5X reduction in average low power and a 13X increase in average reading speed compared with the previous works due to its device structure and the proposed circuit technique.
| Original language | English |
|---|---|
| Pages (from-to) | 30-36 |
| Number of pages | 7 |
| Journal | Microelectronics Journal |
| Volume | 89 |
| DOIs | |
| Publication status | Published - Jul 2019 |
Bibliographical note
Publisher Copyright:© 2019 Elsevier Ltd
Funding
This work is part of a project that has received funding from the European Union’s H2020 research and innovation programme under the Marie Skodowska-Curie grant agreement No 691178 , and by the TUBITAK-BIDEB 2214/A. The authors would like to thank Prof. Kaushik Roy and his grateful discussions.
| Funders | Funder number |
|---|---|
| European Union’s H2020 research and innovation programme | |
| Marie Skodowska-Curie | |
| TUBITAK-BIDEB | 2214/A |
| Horizon 2020 Framework Programme | 691178 |
Keywords
- BER
- High-speed
- Low-power
- MTJ
- PMA
- Sensing
- STT-MRAM