Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3

Yuhang Ren; Piyali Maity; David Ascienzo; Onur Kurt; H. Cheng; Jun Ouyang

doi:10.1002/aelm.202300497

Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr_0.2Ti_0.8O₃

Yuhang Ren^*, Piyali Maity, David Ascienzo, Onur Kurt, H. Cheng, Jun Ouyang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Film ferroelectrics demonstrate large breakdown strength, high energy density, and many unique phenomena not found in bulk materials. In this investigation, a rhombohedral BaZr_0.2Ti_0.8O₃ (BZT) solid solution and various film-substrate misfit strains are utilized to optimize the energy storage performance of ferroelectric thick films. Optical second harmonic generation is applied in both reflection and transmission geometries to reveal the renovation of entangled rhombohedral and tetragonal phases in the BZT films under compressive misfit strains. It is shown that the interfacial strain between the BZT film and substrate introduces the tetragonal domains. The competition between the tetragonal and rhombohedral phases creates the self-assembled, anisotropically strained morphotropic structures to effectively accommodate the elastic and electrical stress fields through inside the thick BZT film. The BZT films demonstrate exceptional energy storage performance because of the adaptable nano-domain structure within the bulk of the BZT films and may be engineered to optimize the superior performance of BZT films in energy storage.

Original language	English
Article number	2300497
Journal	Advanced Electronic Materials
Volume	9
Issue number	11
DOIs	https://doi.org/10.1002/aelm.202300497
Publication status	Published - Nov 2023
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

Funding

The work at Hunter College was supported by the Air Force Office of Scientific Research (Grant No. FA9550-20-1-0388) and PSC-CUNY (Grant No. 63728-00 51). J. Ouyang acknowledges the partial financial support from the National Natural Science Foundation of China (Project Grant nos. 51772175), and the Jinan City Science and Technology Bureau (Grant No. 2021GXRC055). H. Cheng acknowledges the partial support from the Jiangsu Province NSFC (Grant No. BK20180764). The work at Hunter College was supported by the Air Force Office of Scientific Research (Grant No. FA9550‐20‐1‐0388) and PSC‐CUNY (Grant No. 63728‐00 51). J. Ouyang acknowledges the partial financial support from the National Natural Science Foundation of China (Project Grant nos. 51772175), and the Jinan City Science and Technology Bureau (Grant No. 2021GXRC055). H. Cheng acknowledges the partial support from the Jiangsu Province NSFC (Grant No. BK20180764).

Funders	Funder number
Jiangsu Province NSFC	BK20180764
PSC‐CUNY	63728‐00 51
Air Force Office of Scientific Research	FA9550‐20‐1‐0388
Jinan Science and Technology Bureau	2021GXRC055
Professional Staff Congress and City University of New York
National Natural Science Foundation of China	51772175

Keywords

ferroelectric thin films
high-energy-storage density
polymorphic domain structures
second harmonic generation
strain engineering

Access to Document

10.1002/aelm.202300497

Cite this

@article{d4409d4a3b244d4ab06d203cadcdf4da,

title = "Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3",

abstract = "Film ferroelectrics demonstrate large breakdown strength, high energy density, and many unique phenomena not found in bulk materials. In this investigation, a rhombohedral BaZr0.2Ti0.8O3 (BZT) solid solution and various film-substrate misfit strains are utilized to optimize the energy storage performance of ferroelectric thick films. Optical second harmonic generation is applied in both reflection and transmission geometries to reveal the renovation of entangled rhombohedral and tetragonal phases in the BZT films under compressive misfit strains. It is shown that the interfacial strain between the BZT film and substrate introduces the tetragonal domains. The competition between the tetragonal and rhombohedral phases creates the self-assembled, anisotropically strained morphotropic structures to effectively accommodate the elastic and electrical stress fields through inside the thick BZT film. The BZT films demonstrate exceptional energy storage performance because of the adaptable nano-domain structure within the bulk of the BZT films and may be engineered to optimize the superior performance of BZT films in energy storage.",

keywords = "ferroelectric thin films, high-energy-storage density, polymorphic domain structures, second harmonic generation, strain engineering",

author = "Yuhang Ren and Piyali Maity and David Ascienzo and Onur Kurt and H. Cheng and Jun Ouyang",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.",

year = "2023",

month = nov,

doi = "10.1002/aelm.202300497",

language = "English",

volume = "9",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "11",

}

TY - JOUR

T1 - Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3

AU - Ren, Yuhang

AU - Maity, Piyali

AU - Ascienzo, David

AU - Kurt, Onur

AU - Cheng, H.

AU - Ouyang, Jun

PY - 2023/11

Y1 - 2023/11

N2 - Film ferroelectrics demonstrate large breakdown strength, high energy density, and many unique phenomena not found in bulk materials. In this investigation, a rhombohedral BaZr0.2Ti0.8O3 (BZT) solid solution and various film-substrate misfit strains are utilized to optimize the energy storage performance of ferroelectric thick films. Optical second harmonic generation is applied in both reflection and transmission geometries to reveal the renovation of entangled rhombohedral and tetragonal phases in the BZT films under compressive misfit strains. It is shown that the interfacial strain between the BZT film and substrate introduces the tetragonal domains. The competition between the tetragonal and rhombohedral phases creates the self-assembled, anisotropically strained morphotropic structures to effectively accommodate the elastic and electrical stress fields through inside the thick BZT film. The BZT films demonstrate exceptional energy storage performance because of the adaptable nano-domain structure within the bulk of the BZT films and may be engineered to optimize the superior performance of BZT films in energy storage.

AB - Film ferroelectrics demonstrate large breakdown strength, high energy density, and many unique phenomena not found in bulk materials. In this investigation, a rhombohedral BaZr0.2Ti0.8O3 (BZT) solid solution and various film-substrate misfit strains are utilized to optimize the energy storage performance of ferroelectric thick films. Optical second harmonic generation is applied in both reflection and transmission geometries to reveal the renovation of entangled rhombohedral and tetragonal phases in the BZT films under compressive misfit strains. It is shown that the interfacial strain between the BZT film and substrate introduces the tetragonal domains. The competition between the tetragonal and rhombohedral phases creates the self-assembled, anisotropically strained morphotropic structures to effectively accommodate the elastic and electrical stress fields through inside the thick BZT film. The BZT films demonstrate exceptional energy storage performance because of the adaptable nano-domain structure within the bulk of the BZT films and may be engineered to optimize the superior performance of BZT films in energy storage.

KW - ferroelectric thin films

KW - high-energy-storage density

KW - polymorphic domain structures

KW - second harmonic generation

KW - strain engineering

UR - https://www.scopus.com/pages/publications/85170200705

U2 - 10.1002/aelm.202300497

DO - 10.1002/aelm.202300497

M3 - Article

AN - SCOPUS:85170200705

SN - 2199-160X

VL - 9

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 11

M1 - 2300497

ER -