Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3

Yuhang Ren*, Piyali Maity, David Ascienzo, Onur Kurt, H. Cheng, Jun Ouyang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Film ferroelectrics demonstrate large breakdown strength, high energy density, and many unique phenomena not found in bulk materials. In this investigation, a rhombohedral BaZr0.2Ti0.8O3 (BZT) solid solution and various film-substrate misfit strains are utilized to optimize the energy storage performance of ferroelectric thick films. Optical second harmonic generation is applied in both reflection and transmission geometries to reveal the renovation of entangled rhombohedral and tetragonal phases in the BZT films under compressive misfit strains. It is shown that the interfacial strain between the BZT film and substrate introduces the tetragonal domains. The competition between the tetragonal and rhombohedral phases creates the self-assembled, anisotropically strained morphotropic structures to effectively accommodate the elastic and electrical stress fields through inside the thick BZT film. The BZT films demonstrate exceptional energy storage performance because of the adaptable nano-domain structure within the bulk of the BZT films and may be engineered to optimize the superior performance of BZT films in energy storage.

Original languageEnglish
Article number2300497
JournalAdvanced Electronic Materials
Volume9
Issue number11
DOIs
Publication statusPublished - Nov 2023
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

Keywords

  • ferroelectric thin films
  • high-energy-storage density
  • polymorphic domain structures
  • second harmonic generation
  • strain engineering

Fingerprint

Dive into the research topics of 'Second Harmonic Generation Studies of Interfacial Strain Engineering in BaZr0.2Ti0.8O3'. Together they form a unique fingerprint.

Cite this