Abstract
We demonstrate cuprous oxide (Cu2O) based screen engineered field effect solar cells with a record breaking efficiency, exceeding 3.486%, for Cu2O based p-n homojunction. In this architecture, CuO nanowire interphase is successfully employed in the Cu2O fabrication by effectively serving as a simultaneous ohmic current collector. These screen engineered field effect photovoltaic principles are essential in developing promising photovoltaics architectures for hard-to-dope materials that, in principle, enable extremely low-cost, high efficiency solar cells.
Original language | English |
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Article number | 9097170 |
Pages (from-to) | 1138-1140 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 41 |
Issue number | 7 |
DOIs | |
Publication status | Published - Jul 2020 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 1980-2012 IEEE.
Keywords
- Photovoltaics
- Schottky barriers
- cuprous oxide
- earth abundant semiconductors
- electric field effect
- hard to dope materials
- solar cell