Schottky barrier diode parameters of Ag/MgPc/p-Si structure

Mevlüde Canlca; Mustafa Coşkun; Ahmet Altndal; Tebello Nyokong

doi:10.1142/S1088424612500824

Schottky barrier diode parameters of Ag/MgPc/p-Si structure

Mevlüde Canlca, Mustafa Coşkun, Ahmet Altndal^*, Tebello Nyokong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V^1/2 plots indicated that the thermoionic emission theory can be applied to evaluate junction parameters for the investigated SB diode rather than space-charge limited conduction (SCLC) mechanism and bulk-limited PooleFrenkel emission. The bulk doping concentration N_B and fixed oxide charges N_f was determined from the measured high frequency C-V curve and was found to be 9.5 × 10¹⁴ cm^-3 and 2.3 × 10¹³ cm^-2, respectively. The values of barrier height obtained from Norde's function were compared with those from the forward bias current-voltage characteristic, and it was seen that there was a good agreement between barrier heights from both methods.

Original language	English
Pages (from-to)	855-860
Number of pages	6
Journal	Journal of Porphyrins and Phthalocyanines
Volume	16
Issue number	7-8
DOIs	https://doi.org/10.1142/S1088424612500824
Publication status	Published - 2012
Externally published	Yes

Funding

This work was supported by the Department of Science and Technology (DST) and National Research Foundation (NRF), South Africa through DST/NRF South African Research Chairs Initiative for Professor of Medicinal Chemistry and Nanotechnology, the Research Fund of the Yildiz Technical University (Project No. 24-01-02-12) and Rhodes University.

Funders	Funder number
National Research Foundation
Rhodes University
Department of Science and Technology, Ministry of Science and Technology, India
Yildiz Teknik Üniversitesi	24-01-02-12

Keywords

MIS structure
ball type MgPc
fixed oxide charge
interface trap
nonperiferally position

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10.1142/S1088424612500824

Cite this

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title = "Schottky barrier diode parameters of Ag/MgPc/p-Si structure",

abstract = "An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V1/2 plots indicated that the thermoionic emission theory can be applied to evaluate junction parameters for the investigated SB diode rather than space-charge limited conduction (SCLC) mechanism and bulk-limited PooleFrenkel emission. The bulk doping concentration NB and fixed oxide charges Nf was determined from the measured high frequency C-V curve and was found to be 9.5 × 1014 cm-3 and 2.3 × 1013 cm-2, respectively. The values of barrier height obtained from Norde's function were compared with those from the forward bias current-voltage characteristic, and it was seen that there was a good agreement between barrier heights from both methods.",

keywords = "MIS structure, ball type MgPc, fixed oxide charge, interface trap, nonperiferally position",

author = "Mevl{\"u}de Canlca and Mustafa Co{\c s}kun and Ahmet Altndal and Tebello Nyokong",

year = "2012",

doi = "10.1142/S1088424612500824",

language = "English",

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pages = "855--860",

journal = "Journal of Porphyrins and Phthalocyanines",

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TY - JOUR

T1 - Schottky barrier diode parameters of Ag/MgPc/p-Si structure

AU - Canlca, Mevlüde

AU - Coşkun, Mustafa

AU - Altndal, Ahmet

AU - Nyokong, Tebello

PY - 2012

Y1 - 2012

N2 - An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V1/2 plots indicated that the thermoionic emission theory can be applied to evaluate junction parameters for the investigated SB diode rather than space-charge limited conduction (SCLC) mechanism and bulk-limited PooleFrenkel emission. The bulk doping concentration NB and fixed oxide charges Nf was determined from the measured high frequency C-V curve and was found to be 9.5 × 1014 cm-3 and 2.3 × 1013 cm-2, respectively. The values of barrier height obtained from Norde's function were compared with those from the forward bias current-voltage characteristic, and it was seen that there was a good agreement between barrier heights from both methods.

AB - An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V1/2 plots indicated that the thermoionic emission theory can be applied to evaluate junction parameters for the investigated SB diode rather than space-charge limited conduction (SCLC) mechanism and bulk-limited PooleFrenkel emission. The bulk doping concentration NB and fixed oxide charges Nf was determined from the measured high frequency C-V curve and was found to be 9.5 × 1014 cm-3 and 2.3 × 1013 cm-2, respectively. The values of barrier height obtained from Norde's function were compared with those from the forward bias current-voltage characteristic, and it was seen that there was a good agreement between barrier heights from both methods.

KW - MIS structure

KW - ball type MgPc

KW - fixed oxide charge

KW - interface trap

KW - nonperiferally position

UR - https://www.scopus.com/pages/publications/84864774546

U2 - 10.1142/S1088424612500824

DO - 10.1142/S1088424612500824

M3 - Article

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SN - 1088-4246

VL - 16

SP - 855

EP - 860

JO - Journal of Porphyrins and Phthalocyanines

JF - Journal of Porphyrins and Phthalocyanines

IS - 7-8

ER -

Schottky barrier diode parameters of Ag/MgPc/p-Si structure

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Keywords

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