Abstract
In this paper, different sized NMOS devices, with the drain and gate terminals connected to 1.8 V and other terminals connected to ground potential, were irradiated. The effects of irradiation were investigated on the devices with either proper configuration of the drain and source terminals or with them reversed. Differences between the measured results corresponding to each configuration are attributed to different trap concentrations on the drain and source sides of STI. This idea has been tested by TCAD simulations, as well, and similar results have been obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 449 |
| DOIs | |
| Publication status | Published - 15 Jun 2019 |
Bibliographical note
Publisher Copyright:© 2019 Elsevier B.V.
Funding
This work was sponsored by the Technological Research Council of Turkey under the project TÜBİTAK 1001 215E080 and Istanbul Technical University Department of Scientific Research Projects under the project contract number 40609. The authors would like to thank Prof. Sevilay Hacıyakupoğlu for valuable technical discussions, as well as, to the Turkish Atomic Energy Authority, particularly Mr. Zati Ünal, for his kind technical help during the preparation of the experimental setup.
| Funders | Funder number |
|---|---|
| Istanbul Technical University Department of Scientific Research Projects | 40609 |
| Technological Research Council of Turkey | 1001 215E080 |
Keywords
- MOSFETs
- Radiation damage
- STI
- TID
- Trap density