Prediction of Indium Fraction Effect on Electrical Behavior of 90 nm InxGa1-xAs MOSFETs Using BSIM4

In this present paper, the electrical behavior of MOSFET transistors in InxGa1-xAs semiconductor materials designed on 90 nm technology has been predicted using the BSIM4 model, by studying the effect of indium fraction x on the output and transfer characteristics, on-resistance (Ron), saturation current (Isat), threshold voltage (VTh), drain-induced barrier lowering (DIBL), leakage current (IOFF), ION/IOFF ratio, subthreshold swing (SS), transconductance (gm), output conductance (gds), and intrinsic voltage gain (Av) of these transistors in the range from x=0 to x=1. This study reveals which InxGa1-xAs MOSFET transistors are characterized by low voltage and low power, high switching speed, or high amplification efficiency based on the Indium fraction x. In addition to providing a more comprehensive understanding of the functioning of these devices. This study also makes it possible to predict the performance of these transistors for specific electronic applications prior to fabrication by selecting the corresponding indium fraction value.