Photon parameters for γ-rays sensing properties of some thick oxide films

H. Birtan Kavanoz, Özlem Yaǧci, Zeynel Yalçin, Orhan Içelli*, Ahmet Altindal, Mustafa Okutan, Kulwinder Singh Mann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

This study aimed at determining gamma-rays sensing properties of some thick oxide films (LiCoO2, TiO2, Cr2O3, Nb2O5, NiO, ZnO, Zn2SnO4, SnO 2, CeO2, SmFeO3, SmCoO3, WO 3, In2O3) in energy range of 0.015-15 MeV by calculating total mass attenuation coefficients (μ/ρ), effective atomic numbers (Zeff) and effective electron densities Nel,eff. In addition, the energy absorption (EABF) and exposure (EBF) build-up factors have been calculated for these samples within the same energy range and up to the penetration depth of 40 mean free paths (mfp). The computed EABF and EBF are useful for extensive utilization of design in radiation shields and gas sensors. The result of the calculations revealed that the Zn2SnO 4 oxide film exhibited superior gamma-rays sensing response in the wide energy range.

Original languageEnglish
Pages (from-to)238-245
Number of pages8
JournalVacuum
Volume101
DOIs
Publication statusPublished - 2014
Externally publishedYes

Funding

This work was supported by the Yıldız Technical University under award number 2011-01-01-KAP02-KAP01.

FundersFunder number
Yıldız Technical University2011-01-01-KAP02-KAP01

    Keywords

    • Effective electron density
    • Gamma-rays sensors
    • Thick oxide films

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