Performance Analysis of Power Devices for Bridgeless Totem-Pole PFC at Different Switching Frequencies

Enes Çatlioglu, Deniz Yildirim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Bridgeless Totem-Pole power factor correction (BTPPFC) topology is very attractive compared to other power factor correction (PFC) topologies due to its simplicity and minimal components. However, BTPPFC could not gained enough popularity with traditional Silicon MOSFET (Si-MOSFET) due to efficiency issues. BTPPFC has hard-switching structure, so it introduces high turn-on loss. Especially reverse recovery loss reduces efficiency considerably. However, with the development of new generation switches such as silicon carbide MOSFET (SiC-MOSFET), Gallium Nitride (GaN) enhancement mode high electron mobility transistors (E-HEMT), Cascode GaN HEMT, BTPPFC topology has become available with high efficiency. This paper presents a performance analysis of Si-MOSFET, SiC-MOSFET, GaN E-HEMT and Cascode GaN HEMT in terms of efficiency for BTPPFC topology at different switching frequencies.

Original languageEnglish
Title of host publicationProceedings - 2023 10th International Conference on Electrical and Electronics Engineering, ICEEE 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages368-374
Number of pages7
ISBN (Electronic)9798350304299
DOIs
Publication statusPublished - 2023
Event10th International Conference on Electrical and Electronics Engineering, ICEEE 2023 - Istanbul, Turkey
Duration: 8 May 202310 May 2023

Publication series

NameProceedings - 2023 10th International Conference on Electrical and Electronics Engineering, ICEEE 2023

Conference

Conference10th International Conference on Electrical and Electronics Engineering, ICEEE 2023
Country/TerritoryTurkey
CityIstanbul
Period8/05/2310/05/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

  • Bridgeless Totem-Pole PFC
  • Cascode GaN HEMT
  • GaN E-HEMT
  • SiC-MOSFET

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