Abstract
High performance and safe light-emitting devices (LEDs) are needed. Highly efficient IIIV nitride semiconductors are known for short-wavelength LEDs. Multiple-quantum well (MQW) are considered in LEDs. Influence of MQW and indium concentration on LED performance are studied here in GaN(n)/InxGa1-xN(i)/GaN(i)/AlGaN(p)/GaN(p) LEDs, where GaN(n) and GaN(p) have different dopants to formulate junctions, InxGa1-xN(i) is a 3 nm-thick intrinsic QW, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, are investigated to rationalize effects of InxGa1-xN(i) QW number and x. Increasing (x) improves radiative recombination rate, spectral power and band gap at less current. Devices with 6 quantum wells and x= 0.16 or 0.18 exhibit best performance. Minimizing x at 0.16, at high performance, is described.
Original language | English |
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Pages (from-to) | 1557-1576 |
Number of pages | 20 |
Journal | Digest Journal of Nanomaterials and Biostructures |
Volume | 18 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Dec 2023 |
Bibliographical note
Publisher Copyright:© 2023 Digest Journal of Nanomaterials and Biostructures. All rights reserved.
Keywords
- Energy saving
- InGaN/GaN
- Multiple quantum-well light emitting diodes (MQW LED)
- Radiative recombination
- Spontaneous emission