Optimizing performance and energy consumption in GaN(n)/InxGa1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction

N. N. Selmane; A. A. Cheknane; F. F. Khemloul; H. S. Hilal; M. H.S. Helal; N. N. Baydogan

doi:10.15251/DJNB.2023.184.1557

Optimizing performance and energy consumption in GaN(n)/InxGa_1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction

N. N. Selmane^*, A. A. Cheknane, F. F. Khemloul, H. S. Hilal, M. H.S. Helal, N. N. Baydogan

^*Corresponding author for this work

Energy Institute

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

High performance and safe light-emitting devices (LEDs) are needed. Highly efficient IIIV nitride semiconductors are known for short-wavelength LEDs. Multiple-quantum well (MQW) are considered in LEDs. Influence of MQW and indium concentration on LED performance are studied here in GaN(n)/In_xGa_1-xN(i)/GaN(i)/AlGaN(p)/GaN(p) LEDs, where GaN(n) and GaN(p) have different dopants to formulate junctions, In_xGa_1-xN(i) is a 3 nm-thick intrinsic QW, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, are investigated to rationalize effects of In_xGa_1-xN(i) QW number and x. Increasing (x) improves radiative recombination rate, spectral power and band gap at less current. Devices with 6 quantum wells and x= 0.16 or 0.18 exhibit best performance. Minimizing x at 0.16, at high performance, is described.

Original language	English
Pages (from-to)	1557-1576
Number of pages	20
Journal	Digest Journal of Nanomaterials and Biostructures
Volume	18
Issue number	4
DOIs	https://doi.org/10.15251/DJNB.2023.184.1557
Publication status	Published - 1 Dec 2023

Bibliographical note

Publisher Copyright:
© 2023 Digest Journal of Nanomaterials and Biostructures. All rights reserved.

Funding

Ali Cheknane and Naceur Selmane acknowledge financial support from Amar Telidji University of Laghouat through the PRFU project/N° A10N01UN030120220002, entitled: « Contribution à l’étude des propriétés physico-chimiques des nouveaux matériaux: Applications dans le domaine des énergies renouvelables ». They also thank the General Directorate of Scientific Research and Technological Development (DGRSDT), Algérie. No funding was donated to Hikmat S. Hilal.

Funders	Funder number
Amar Telidji University of Laghouat	A10N01UN030120220002
Applications dans le domaine des énergies renouvelables

Keywords

Energy saving
InGaN/GaN
Multiple quantum-well light emitting diodes (MQW LED)
Radiative recombination
Spontaneous emission

Access to Document

10.15251/DJNB.2023.184.1557

Cite this

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title = "Optimizing performance and energy consumption in GaN(n)/InxGa1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction",

abstract = "High performance and safe light-emitting devices (LEDs) are needed. Highly efficient IIIV nitride semiconductors are known for short-wavelength LEDs. Multiple-quantum well (MQW) are considered in LEDs. Influence of MQW and indium concentration on LED performance are studied here in GaN(n)/InxGa1-xN(i)/GaN(i)/AlGaN(p)/GaN(p) LEDs, where GaN(n) and GaN(p) have different dopants to formulate junctions, InxGa1-xN(i) is a 3 nm-thick intrinsic QW, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, are investigated to rationalize effects of InxGa1-xN(i) QW number and x. Increasing (x) improves radiative recombination rate, spectral power and band gap at less current. Devices with 6 quantum wells and x= 0.16 or 0.18 exhibit best performance. Minimizing x at 0.16, at high performance, is described.",

keywords = "Energy saving, InGaN/GaN, Multiple quantum-well light emitting diodes (MQW LED), Radiative recombination, Spontaneous emission",

author = "Selmane, {N. N.} and Cheknane, {A. A.} and Khemloul, {F. F.} and Hilal, {H. S.} and Helal, {M. H.S.} and Baydogan, {N. N.}",

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T1 - Optimizing performance and energy consumption in GaN(n)/InxGa1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction

AU - Selmane, N. N.

AU - Cheknane, A. A.

AU - Khemloul, F. F.

AU - Hilal, H. S.

AU - Helal, M. H.S.

AU - Baydogan, N. N.

PY - 2023/12/1

Y1 - 2023/12/1

N2 - High performance and safe light-emitting devices (LEDs) are needed. Highly efficient IIIV nitride semiconductors are known for short-wavelength LEDs. Multiple-quantum well (MQW) are considered in LEDs. Influence of MQW and indium concentration on LED performance are studied here in GaN(n)/InxGa1-xN(i)/GaN(i)/AlGaN(p)/GaN(p) LEDs, where GaN(n) and GaN(p) have different dopants to formulate junctions, InxGa1-xN(i) is a 3 nm-thick intrinsic QW, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, are investigated to rationalize effects of InxGa1-xN(i) QW number and x. Increasing (x) improves radiative recombination rate, spectral power and band gap at less current. Devices with 6 quantum wells and x= 0.16 or 0.18 exhibit best performance. Minimizing x at 0.16, at high performance, is described.

AB - High performance and safe light-emitting devices (LEDs) are needed. Highly efficient IIIV nitride semiconductors are known for short-wavelength LEDs. Multiple-quantum well (MQW) are considered in LEDs. Influence of MQW and indium concentration on LED performance are studied here in GaN(n)/InxGa1-xN(i)/GaN(i)/AlGaN(p)/GaN(p) LEDs, where GaN(n) and GaN(p) have different dopants to formulate junctions, InxGa1-xN(i) is a 3 nm-thick intrinsic QW, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, are investigated to rationalize effects of InxGa1-xN(i) QW number and x. Increasing (x) improves radiative recombination rate, spectral power and band gap at less current. Devices with 6 quantum wells and x= 0.16 or 0.18 exhibit best performance. Minimizing x at 0.16, at high performance, is described.

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KW - Radiative recombination

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