Near-infrared resonant cavity enhanced silicon microsphere photodetector

Mohammed Sharif Murib; Emre Yüce; Oǧuzhan Gürlü; Ali Serpengüzel

doi:10.1117/12.821198

Near-infrared resonant cavity enhanced silicon microsphere photodetector

Mohammed Sharif Murib
, Emre Yüce
, Oǧuzhan Gürlü
, Ali Serpengüzel^*

^*Corresponding author for this work

Department of Physics Engineering

Koc University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Elastic scattering intensity calculations at 90° and 0° for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 μm radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 10⁴.

Original language	English
Title of host publication	Photonic Materials, Devices, and Applications III
DOIs	https://doi.org/10.1117/12.821198
Publication status	Published - 2009
Event	Photonic Materials, Devices, and Applications III - Dresden, Germany Duration: 4 May 2009 → 6 May 2009

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7366
ISSN (Print)	0277-786X

Conference

Conference	Photonic Materials, Devices, and Applications III
Country/Territory	Germany
City	Dresden
Period	4/05/09 → 6/05/09

Keywords

Microspheres
Morphology dependent resonances
RCE photodetector
Silicon

Access to Document

10.1117/12.821198

Cite this

@inproceedings{d1eef143ca3b4bda9c928ff93b131a6c,

title = "Near-infrared resonant cavity enhanced silicon microsphere photodetector",

abstract = "Elastic scattering intensity calculations at 90° and 0° for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 μm radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 104.",

keywords = "Microspheres, Morphology dependent resonances, RCE photodetector, Silicon",

author = "Murib, \{Mohammed Sharif\} and Emre Y{\"u}ce and Oǧuzhan G{\"u}rl{\"u} and Ali Serpeng{\"u}zel",

year = "2009",

doi = "10.1117/12.821198",

language = "English",

isbn = "9780819476401",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Photonic Materials, Devices, and Applications III",

note = "Photonic Materials, Devices, and Applications III ; Conference date: 04-05-2009 Through 06-05-2009",

}

Murib, MS, Yüce, E, Gürlü, O & Serpengüzel, A 2009, Near-infrared resonant cavity enhanced silicon microsphere photodetector. in Photonic Materials, Devices, and Applications III., 73661M, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7366, Photonic Materials, Devices, and Applications III, Dresden, Germany, 4/05/09. https://doi.org/10.1117/12.821198

Near-infrared resonant cavity enhanced silicon microsphere photodetector. / Murib, Mohammed Sharif; Yüce, Emre; Gürlü, Oǧuzhan et al.
Photonic Materials, Devices, and Applications III. 2009. 73661M (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7366).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Near-infrared resonant cavity enhanced silicon microsphere photodetector

AU - Murib, Mohammed Sharif

AU - Yüce, Emre

AU - Gürlü, Oǧuzhan

AU - Serpengüzel, Ali

PY - 2009

Y1 - 2009

N2 - Elastic scattering intensity calculations at 90° and 0° for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 μm radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 104.

AB - Elastic scattering intensity calculations at 90° and 0° for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 μm radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 104.

KW - Microspheres

KW - Morphology dependent resonances

KW - RCE photodetector

KW - Silicon

UR - https://www.scopus.com/pages/publications/70349980734

U2 - 10.1117/12.821198

DO - 10.1117/12.821198

M3 - Conference contribution

AN - SCOPUS:70349980734

SN - 9780819476401

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Photonic Materials, Devices, and Applications III

T2 - Photonic Materials, Devices, and Applications III

Y2 - 4 May 2009 through 6 May 2009

ER -

Near-infrared resonant cavity enhanced silicon microsphere photodetector

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Keywords

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